Silicon ingot and method of manufacturing a silicon ingot

1. A method of magnetic Czochralski (MCZ) growth of an n-type MCZ silicon ingot, the method comprising:

melting a mixture of silicon material suitable for manufacturing of power semiconductor transistors and phosphorus as an n-type dopant material in a crucible;

extracting the MCZ silicon ingot with a diameter of 200 mm or more from the molten silicon over an extraction time period; and

adding boron to the molten silicon over at least part of the extraction time period,

thereby partially compensating the n-type doping of the MCZ silicon ingot, the n-type doping of the MCZ silicon ingot being set in a range from 1×10 13 cm −3 to 4×10 14 cm −3 ,

wherein altering the rate of adding the boron to the molten silicon includes at least one of altering a depth of a source material dipped into the molten silicon and altering a temperature of the source material, wherein the source material is doped with the boron

wherein doping of the source material is carried out by one of in-situ doping, by a plasma deposition process through a surface of the source material, by ion implantation through the surface of the source material and by a diffusion process through the surface of the source material,

wherein a segregation coefficient of the n-type dopant material is smaller than a segregation coefficient of boron.

2. The method of claim 1 , further comprising controlling a rate of adding the boron to the molten silicon by measuring a weight of the silicon ingot during the Czochralski growth process.

3. The method of claim 1 , further comprising controlling a rate of adding the boron to the molten silicon by optically measuring a change in dimensions of a quartz source material doped with the boron.

4. The method of claim 1 , wherein boron is added to the silicon ingot at a doping concentration in a range of 5×10 12 cm −3 and 3×10 16 cm −3 .

5. The method of claim 1 , wherein phosphorus is added to the silicon ingot at a doping concentration in a range of 8×10 12 cm −3 and 5×10 16 cm −3 .

6. A method of magnetic Czochralski (MCZ) growth of an n-type MCZ silicon ingot, the method comprising:

melting a mixture of silicon material suitable for manufacturing of power semiconductor transistors and phosphorus as an n-type dopant material in a crucible;

extracting the MCZ silicon ingot with a diameter of 200 mm or more from the molten silicon over an extraction time period;

adding boron to the molten silicon over at least part of the extraction time period,

thereby partially compensating the n-type doping of the MCZ silicon ingot, the n-type doping of the MCZ silicon ingot being set in a range from 1×10 13 cm −3 to 4×10 14 cm −3 ,

wherein the boron is added to the molten silicon from a boron doped crucible.

7. The method of claim 6 , wherein the boron doped crucible is formed by at least one of implanting boron into the crucible, diffusion of boron into the crucible and in-situ doping.

8. The method of claim 7 , wherein the boron is implanted into the crucible at various energies.

9. The method of claim 7 , wherein the boron is implanted into the crucible at various doses.

10. The method of claim 6 , further comprising applying a thermal budget to the crucible by heating that is configured to set a retrograde profile of the boron in the crucible.

11. The method of claim 6 , further comprising forming a layer at inner walls of the crucible.