Semiconductor apparatus
A semiconductor apparatus includes: a radiator plate; a resin insulating layer provided on the radiator plate; a resin block made of resin and armularly disposed to cover an end part of the radiator plate and an end part of the resin insulating layer; a case disposed to cover the resin block; and a sealing material filled in an inside of the case.
1. A semiconductor apparatus comprising:
a radiator plate;
a resin insulating layer provided on the radiator plate;
a resin block made of resin and annularly disposed to cover an end part of the radiator plate and an end part of the resin insulating layer;
a case disposed to cover the resin block; and
a sealing material filled in an inside of the case,
wherein the resin block is separated from the sealing material by an adhesive material such that a gap is provided between the resin block and the sealing material.
2. The semiconductor apparatus according to claim 1 , wherein the end part of the radiator plate has a convex shape at a center part on a lateral face of the end part of the radiator plate, and
the resin block has a concave shape corresponding to the convex shape.
3. The semiconductor apparatus according to claim 2 , wherein the resin block is disposed to cover a part of a surface of the resin insulating layer.
4. The semiconductor apparatus according to claim 3 , wherein the case is bonded to the resin block via the adhesive material.
5. The semiconductor apparatus according to claim 2 , wherein the case is bonded to the resin block via the adhesive material.
6. The semiconductor apparatus according to claim 2 , wherein the sealing material is an epoxy-based resin.
7. The semiconductor apparatus according to claim 2 , further comprising a wiring layer provided on the resin insulating layer, and a SiC semiconductor device joined to the wiring layer via a solder.
8. The semiconductor apparatus according to claim 1 , wherein the resin block is disposed to cover a part of a surface of the resin insulating layer.
9. The semiconductor apparatus according to claim 8 , wherein the case is bonded to the resin block via the adhesive material.
10. The semiconductor apparatus according to claim 8 , wherein the sealing material is an epoxy-based resin.
11. The semiconductor apparatus according to claim 8 , further comprising a wiring layer provided on the resin insulating layer, and a SiC semiconductor device joined to the wiring layer via a solder.
12. The semiconductor apparatus according to claim 1 , wherein the case is bonded to the resin block via the adhesive material.
13. The semiconductor apparatus according to claim 12 , wherein the sealing material is an epoxy-based resin.
14. The semiconductor apparatus according to claim 12 , further comprising a wiring layer provided on the resin insulating layer, and a SiC semiconductor device joined to the wiring layer via a solder.
15. The semiconductor apparatus according to claim 1 , wherein the sealing material is an epoxy-based resin.
16. The semiconductor apparatus according to claim 1 , further comprising a wiring layer provided on the resin insulating layer, and a SiC semiconductor device joined to the wiring layer via a solder.
17. The semiconductor apparatus according to claim 1 , wherein the resin block covers end parts of the radiator plate, the end parts of the radiator plate including every lateral face of the radiator plate.