Dram and method of making
Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
1. A cell array, comprising:
one or more first trenches located in an active region;
a first dielectric layer disposed in the one or more first trenches;
a first conformal layer disposed on the first dielectric layer in the one or more first trenches, the first conformal layer comprising a first material;
a first conductive material disposed on and in direct contact with the first conformal layer in the one or more first trenches;
one or more shallow trench isolations located in a field region;
one or more second trenches located in the one or more shallow trench isolations;
a second dielectric layer disposed in the one or more second trenches;
a second conformal layer disposed on the second dielectric layer in the one or more second trenches, the second conformal layer comprising the first material doped with one or more dopants; and
a second conductive material disposed on and in direct contact with the second conformal layer in the one or more second trenches.
2. The cell array of claim 1 , wherein the first dielectric layer is an oxide layer.
3. The cell array of claim 2 , wherein the first material is metal nitride.
4. The cell array of claim 3 , wherein the first conductive material and the second conductive material are a metal.
5. The cell array of claim 1 , wherein the second dielectric layer is an oxide layer.
6. A cell array, comprising:
a pair of first trenches located in an active region, wherein the active region is disposed between a pair of adjacent field regions each having a shallow trench isolation therein;
a first dielectric layer disposed on each of the first trenches;
a first conformal layer disposed on the first dielectric layer, the first conformal layer comprising a first material;
a first conductive material disposed on and in direct contact with the first conformal layer;
a second trench located in each of the shallow trench isolations;
a second dielectric layer disposed on the second trench;
a second conformal layer disposed on the second dielectric layer in the second trench, the second conformal layer comprising the first material doped with one or more dopants; and
a second conductive material disposed on and in direct contact with the second conformal layer in the second trench.
7. The cell array of claim 6 , wherein the first dielectric layer is an oxide layer.
8. The cell array of claim 6 , wherein the second dielectric layer is an oxide layer.
9. The cell array of claim 6 , wherein the first material is metal nitride.
10. The cell array of claim 6 , wherein the first conductive material and the second conductive material are a metal.