Nano-cavity modulator device and method of manufacture and use

1. An electro-optic modulator, comprising a semiconductor photonic crystal nano-cavity, and a semiconductor-insulator-semiconductor (SIS) capacitor disposed in contact with the nano-cavity, wherein the semiconductor photonic crystal nano-cavity comprises a one-dimensional nano-cavity and comprises two photonic crystal mirror segments placed back-to-back with the nano-cavity disposed therebetween.

2. The electro-optic modulator of claim 1 , wherein the SIS capacitor comprises a first layer of oxide material disposed on the nano-cavity and comprises a second layer of transparent conductive oxide (TCO) material disposed on and covering the first layer of material to provide a stack of oxide material and TCO material.

3. The electro-optic modulator of claim 2 , wherein the first and second layers are conformally deposited on the nano-cavity.

4. The electro-optic modulator of claim 2 , wherein the second layer comprises one or more of indium-tin oxide and In 2 O 3 .

5. The electro-optic modulator of claim 4 , wherein the first layer comprises one or more of SiO 2 and HfO 2 .

6. The electro-optic modulator of claim 2 , wherein the first layer comprises one or more of SiO 2 and HfO 2 .

7. The electro-optic modulator of claim 2 , wherein the second layer has a conductivity of at least 3.2e4 S/m.

8. The electro-optic modulator of claim 1 , comprising a waveguide made of the semiconductor material with the nano-cavity located therein.

9. The electro-optic modulator of claim 1 , wherein the photonic crystal mirror segments extend along the length of the waveguide.

10. The electro-optic modulator of claim 8 , comprising a first electrode disposed in electrical communication with the waveguide at the location of the nano-cavity and a second electrode disposed in electrical communication with the second layer.

11. The electro-optic modulator of claim 8 , wherein the waveguide is a strip waveguide.

12. An electro-optic modulator, comprising:

a strip waveguide comprising a semiconductor material, the waveguide having a height, length, and width;

two photonic crystal mirror segments placed back-to-back along the length of the waveguide to define a one-dimensional photonic crystal nano-cavity therebetween;

a layer of oxide material conformally disposed in contact with an upper surface of the waveguide at the location of the nano-cavity; and

a layer of transparent conductive oxide disposed in contact with the layer of oxide material.

13. The electro-optic modulator of claim 12 , wherein the waveguide has one or more side surfaces dispose in contact with the upper surface and wherein the layer of oxide material is conformally deposited in contact with the one or more side surfaces.

14. A method for modulating light, comprising:

providing an electro-optic modulator having a semiconductor photonic crystal nano-cavity, and a semiconductor-insulator-semiconductor (SIS) capacitor disposed in contact with the nano-cavity, wherein the semiconductor photonic crystal nano-cavity comprises a one-dimensional nano-cavity and comprises two photonic crystal mirror segments placed back-to-back with the nano-cavity disposed therebetween;

injecting light into the photonic crystal nano-cavity; and

applying a time-varying voltage across the SIS capacitor to effect modulation of the light within the photonic crystal nano-cavity.

15. The method of claim 14 , wherein the SIS capacitor comprises a first layer of oxide material disposed on the nano-cavity and comprises a second layer of transparent conductive oxide (TCO) material disposed on and covering the first layer of material to provide a stack of oxide material and TCO material, and wherein the step of providing a time-varying voltage comprises applying the voltage to the transparent conductive oxide material and the nano-cavity.

16. The method of claim 14 , wherein the SIS capacitor comprises a first layer of oxide material disposed on the nano-cavity and comprises a second layer of transparent conductive oxide (TCO) material disposed on and covering the first layer of material to provide a stack of oxide material and TCO material, and wherein the step of providing a time-varying voltage comprises applying the voltage to create an epsilon-near-zero (ENZ) mode in the transparent conductive oxide material.