NAND cell encoding to improve data integrity
Devices and techniques for NAND cell encoding to improve data integrity are disclosed herein. A high-temperature indicator is obtained and a write operation is received. The write operation is then performed on a NAND cell using a modified encoding in response to the high-temperature indicator. The modified encoding includes a reduced number of voltage distribution positions from an unmodified encoding without changing voltage distribution widths, where each voltage distribution corresponds to a discrete set of states an encoding.
1. A non-transitory machine-readable medium including instructions for temperature-sensitive cell encoding, the instructions, when executed by circuitry on a device to program a NAND cell, cause the circuitry to perform operations comprising:
obtaining a temperature;
selecting a NAND cell encoding from a base encoding based on the temperature; and
programming the NAND cell with the encoding, wherein the selected encoding differs from the base encoding by using fewer than all voltage distributions that correspond to the base encoding.
2. The machine-readable medium of claim 1 , wherein the NAND cell is read using the base encoding.
3. The machine-readable medium of claim 1 , wherein the voltage distributions used in the selected encoding increase a read margin between two symbols compared to that of the base encoding.
4. The machine-readable medium of claim 1 , wherein the base encoding has eight discrete states, and wherein the selected encoding has four discrete states.
5. The machine-readable medium of claim 1 , wherein multiple programming passes are used to program the NAND cell, and wherein the first pass operates in accordance with a first programming pass of the base encoding, one or more subsequent programming passes enacting the selected encoding.
6. The machine-readable medium of claim 4 , wherein the four discrete states correspond to states zero, three, four, and seven from the eight discrete states, the states ordered by voltage from lower to higher.
7. The machine-readable medium of claim 6 , wherein:
the voltage distribution position for state zero is unchanged;
the voltage distribution position for state three is moved downward;
the voltage distribution position for seven is moved downward; and
the voltage distribution position for state four is moved upward.
8. The machine-readable medium of claim 1 , wherein the unmodified encoding has four discrete states, and wherein the modified encoding has two discrete states.
9. A device for NAND cell encoding, the NAND device comprising:
a NAND cell; and
a controller to:
obtain a temperature;
select a NAND cell encoding from a base encoding based on the temperature; and
program the NAND cell with the encoding, wherein the selected encoding differs from the base encoding by using fewer than all voltage distributions that correspond to the base encoding.
10. The device of claim 9 , wherein the NAND cell is read using the base encoding.
11. The device of claim 9 , wherein the voltage distributions used in the selected encoding increase a read margin between two symbols compared to that of the base encoding.
12. The device of claim 9 , wherein the base encoding has eight discrete states, and wherein the selected encoding has four discrete states.
13. The device of claim 9 , wherein multiple programming passes are used to program the NAND cell, and wherein the first pass operates in accordance with a first programming pass of the base encoding, one or more subsequent programming passes enacting the selected encoding.
14. The device of claim 12 , wherein the four discrete states correspond to states zero, three, four, and seven from the eight discrete states, the states ordered by voltage from lower to higher.
15. The device of claim 14 , wherein:
the voltage distribution position for state zero is unchanged;
the voltage distribution position for state three is moved downward;
the voltage distribution position for seven is moved downward; and
the voltage distribution position for state four is moved upward.
16. The device of claim 9 , wherein the unmodified encoding has four discrete states, and wherein the modified encoding has two discrete states.
17. A method for temperature-sensitive cell encoding, the method performed by device to program a NAND cell, the method comprising:
obtaining a temperature;
selecting a NAND cell encoding from a base encoding based on the temperature; and
programming the NAND cell with the encoding, wherein the selected encoding differs from the base encoding by using fewer than all voltage distributions that correspond to the base encoding.
18. The method of claim 17 , wherein the NAND cell is read using the base encoding.
19. The method of claim 17 , wherein the voltage distributions used in the selected encoding increase a read margin between two symbols compared to that of the base encoding.
20. The method of claim 17 , wherein the base encoding has eight discrete states, and wherein the selected encoding has four discrete states.
21. The method of claim 17 , wherein multiple programming passes are used to program the NAND cell, and wherein the first pass operates in accordance with a first programming pass of the base encoding, one or more subsequent programming passes enacting the selected encoding.
22. The method of claim 20 , wherein the four discrete states correspond to states zero, three, four, and seven from the eight discrete states, the states ordered by voltage from lower to higher.
23. The method of claim 22 , wherein:
the voltage distribution position for state zero is unchanged;
the voltage distribution position for state three is moved downward;
the voltage distribution position for seven is moved downward; and
the voltage distribution position for state four is moved upward.
24. The method of claim 17 , wherein the unmodified encoding has four discrete states, and wherein the modified encoding has two discrete states.