Method, system and device for integration of volatile and non-volatile memory bitcells
Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.
1. A bitcell circuit comprising:
one or more volatile memory elements;
one or more non-volatile memory elements, wherein
a first volatile memory element of the one or more volatile memory elements and at least a first non-volatile memory element of the one or more non-volatile memory elements are accessible via a first bitline responsive to a signal on a wordline.
2. The bitcell circuit of claim 1 , and further comprising a first conducting element to couple the first non-volatile memory element to a first node and second conducting element to couple a second non-volatile memory element to a second node to form a non-volatile memory cell that is responsive to a signal on a wordline to connect the non-volatile memory cell to the first bitline, and a third conducting element to couple the first volatile memory element to the first node and a fourth conducing element to couple a second volatile memory element to the second node to form a volatile memory cell that is responsive to a signal on said wordline to connect the volatile memory cell to said first bitline.
3. The bitcell circuit of claim 1 , and further comprising at least a first multiplexer circuit to couple the first bitline to either a first terminal of the first volatile memory element or the first terminal of the first non-volatile memory element.
4. The bitcell circuit of claim 1 , and further comprise a conducting element to selectively couple a terminal of the first non-volatile memory element to the first bitline to configure the bitcell circuit to operate as a non-volatile memory bitcell or decouple the terminal of the first non-volatile memory element from the first bitline to configure the bitcell circuit to operate as a volatile memory bitcell.
5. The bitcell circuit of claim 1 , and further comprising a circuit to transfer a value stored in the first non-volatile memory element to the first volatile memory element responsive to power applied to the first volatile memory element.
6. The bitcell circuit of claim 5 , wherein the circuit to transfer the value stored in the first non-volatile memory element to the first volatile memory element is further configured to transfer the value stored in the first non-volatile memory element to the first volatile memory while the bitcell circuit is disconnected from the first bitline.
7. The bitcell circuit of claim 6 , wherein the bitcell circuit is further configured to selectively decouple at least one terminal of the first non-volatile memory element from the bitline to configure the bitcell circuit to operate as a volatile memory bitcell.
8. The bitcell circuit of claim 1 , and further comprising a write driver circuit to apply a programming signal to the first non-volatile memory element to affect a non-volatile memory state of the first non-volatile memory element based on a current volatile memory state of the first volatile memory element while the bitcell circuit is disconnected from the first bitline.
9. The bitcell circuit of claim 1 , wherein the one or more non-volatile memory elements comprise one or more correlated electron switch (CES) elements.