Gate structure of semiconductor device
A semiconductor device and method of manufacture are provided. In some embodiments a divergent ion beam is utilized to implant ions into a capping layer, wherein the capping layer is located over a first metal layer, a dielectric layer, and an interfacial layer over a semiconductor fin. The ions are then driven from the capping layer into one or more of the first metal layer, the dielectric layer, and the interfacial layer.
1. A semiconductor device comprising:
a semiconductor fin over a substrate;
an interfacial layer extending along sidewalls and a top surface of the semiconductor fin, the interfacial layer having a first concentration of a first dopant;
a dielectric layer over the interfacial layer, the dielectric layer having a second concentration of the first dopant; and
a first metal layer over the dielectric layer, the first metal layer having a third concentration of the first dopant.
2. The semiconductor device of claim 1 , wherein the first concentration of the first dopant is greater than the second concentration of the first dopant.
3. The semiconductor device of claim 1 , wherein the second concentration of the first dopant is greater than the third concentration of the first dopant.
4. The semiconductor device of claim 1 , wherein the semiconductor fin has a fourth concentration of the first dopant.
5. The semiconductor device of claim 4 , wherein the third concentration of the first dopant is greater than the fourth concentration of the first dopant.
6. The semiconductor device of claim 4 , wherein the semiconductor fin further comprises a second dopant.
7. The semiconductor device of claim 1 , further comprising an isolation region adjacent the semiconductor fin, the interfacial layer extending along a top surface of the isolation region.
8. The semiconductor device of claim 1 , wherein the first dopant is fluorine, carbon, or nitrogen.
9. A semiconductor device comprising:
a semiconductor fin over a substrate;
an interfacial layer over the semiconductor fin, the interfacial layer having a first non-zero concentration gradient of a first dopant;
a high-k dielectric layer over the interfacial layer, the high-k dielectric layer having a second non-zero concentration gradient of the first dopant; and
a first metal layer over the high-k dielectric layer, the first metal layer having a third non-zero concentration gradient of the first dopant.
10. The semiconductor device of claim 9 , wherein the first dopant is fluorine.
11. The semiconductor device of claim 9 , wherein the interfacial layer comprises silicon oxide.
12. The semiconductor device of claim 11 , wherein the high-k dielectric layer comprises hafnium oxide.
13. The semiconductor device of claim 12 , wherein the first metal layer comprises titanium nitride.
14. The semiconductor device of claim 9 , wherein the high-k dielectric layer is free from implantation damage.
15. A semiconductor device comprising:
isolation regions over a substrate;
a semiconductor fin between adjacent isolation regions;
an interfacial layer in physical contact with sidewalls and a topmost surface of the semiconductor fin;
a high-k dielectric layer over the interfacial layer;
a first metal layer over the high-k dielectric layer; and
a first dopant in the semiconductor fin, the interfacial layer, the high-k dielectric layer, and the first metal layer, wherein a concentration of the first dopant in the first metal layer-decreases along a first direction, and wherein the first direction extends from a topmost surface of the first metal layer toward the topmost surface of the semiconductor fin.
16. The semiconductor device of claim 15 , further comprising a second dopant in the semiconductor fin.
17. The semiconductor device of claim 15 , wherein a concentration of the first dopant in the high-k dielectric layer decreases along the first direction.
18. The semiconductor device of claim 15 , wherein a concentration of the first dopant in the interfacial layer decreases along the first direction.
19. The semiconductor device of claim 15 , wherein a concentration of the first dopant in the semiconductor fin decreases along the first direction.
20. The semiconductor device of claim 15 , wherein the first dopant is fluorine, carbon, or nitrogen.