Semiconductor devices and methods of forming the same
Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
1. A semiconductor device, comprising:
a first conductive layer comprising a first surface;
an organic layer disposed over the first surface of the first conductive layer;
a silicon layer disposed on and in contact with the organic layer, and extended onto and in contact with the first surface of the first conductive layer;
a magnetic layer disposed over the first conductive layer; and
a second conductive layer disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
2. The semiconductor device of claim 1 , wherein the silicon layer is an amorphous silicon layer.
3. The semiconductor device of claim 1 further comprising a non-conductive inorganic layer, wherein the silicon layer is disposed between the organic layer and the non-conductive inorganic layer, and the non-conductive inorganic layer is not in contact with the first conductive layer.
4. The semiconductor device of claim 1 , wherein the organic layer is disposed between the first conductive layer and the magnetic layer.
5. The semiconductor device of claim 1 , wherein the organic layer is disposed between the second conductive layer and the magnetic layer.
6. The semiconductor device of claim 1 further comprising a bump disposed over and electrically connecting the second conductive layer.
7. The semiconductor device of claim 1 , wherein the organic layer comprises a second surface and a sidewall between the first surface of the first conductive layer and the second surface, and the silicon layer is disposed on the second surface, the sidewall surface and the first surface.
8. The semiconductor device of claim 1 , further comprising an additional silicon layer, wherein the additional silicon layer is disposed between a sidewall of the first conductive layer and the organic layer.
9. A semiconductor device, comprising:
a first conductive layer;
an organic layer and a non-conductive inorganic layer, disposed over the first conductive layer;
a silicon layer, disposed between and in contact with the organic layer and the non-conductive inorganic layer, wherein the organic layer is disposed between the silicon layer and the first conductive layer; and
a magnetic layer disposed over the first conductive layer.
10. The semiconductor device of claim 9 , wherein the silicon layer is an amorphous silicon layer.
11. The semiconductor device of claim 9 further comprising a dielectric layer disposed between the organic layer and the first conductive layer, and the dielectric layer is not in contact with the first conductive layer.
12. The semiconductor device of claim 9 , wherein the silicon layer is further disposed on and in contact with a sidewall and a top surface of the first conductive layer.
13. The semiconductor device of claim 9 further comprising a bump electrically connecting the first conductive layer.
14. The semiconductor device of claim 9 , wherein a silicon concentration of the silicon layer ranges from 40% to 100%.
15. A method of forming a semiconductor device, comprising:
forming an organic layer over a first conductive layer, wherein a first surface of the first conductive layer is exposed;
forming a silicon layer on the organic layer, wherein the silicon layer is in contact with the organic layer and the silicon layer is extended onto and in contact with the first surface of the first conductive layer;
forming a magnetic layer over the first conductive layer; and
forming a second conductive layer over the organic layer and the magnetic layer to electrically connect the first conductive layer.
16. The method of claim 15 , wherein the silicon layer is formed by plasma-enhanced chemical vapor deposition (PECVD).
17. The method of claim 15 further comprising performing a plasma treatment on the organic layer before forming the silicon layer.
18. The method of claim 15 further comprising forming a non-conductive inorganic layer on the silicon layer, wherein the silicon layer is disposed between the organic layer and the non-conductive inorganic layer.
19. The method of claim 15 , wherein the organic layer is formed between the first conductive layer and the magnetic layer.
20. The method of claim 15 , wherein the organic layer is formed between the second conductive layer and the magnetic layer.