IGBT with improved terminal and manufacturing method thereof
A terminal structure of an insulated gate bipolar transistor (IGBT) device includes a main junction, a cutoff ring, and a plurality of terminal rings disposed between the main junction and the cutoff ring, and a resistive element having a first terminal electrically connected to the main junction, a second terminal electrically connected to the cutoff ring, and a plurality of intermediate terminals electrically connected to the terminal rings, respectively. The resistive element is configured to uniformly distribute the lateral voltage between the main junction and the cutoff ring to the terminal rings to ensure that the peak electric field is uniformly distributed across the terminal structure, thereby reducing the terminal structure area and package cost of the IGBT device, while improving the device reliability.
1. A terminal structure of an insulated gate bipolar transistor (IGBT) device, comprising:
a main junction, a cutoff ring, and a plurality of terminal rings each having a same structure and disposed between the main junction and the cutoff ring in a substrate, wherein any two adjacent terminal rings are separated by a same spacer region; and
a resistive element having a first terminal electrically connected to the main junction, a second terminal electrically connected to the cutoff ring, and a plurality of intermediate terminals each electrically connected to one of the terminal rings, wherein the resistive element comprises an elongated bar shape, and the intermediate terminals are separated from each other by an equal distance.
2. The terminal structure of claim 1 , wherein the resistive element comprises a resistance value distribution such that a voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings.
3. The terminal structure of claim 2 , wherein the resistive element comprises a single resistor having one or more taps such that the voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings by a corresponding tap of the one or more taps of the resistive element.
4. The terminal structure of claim 2 , wherein the resistive element comprises a plurality of resistors having a same resistance value and connected in series between the main junction and the cutoff ring such that the voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings by a corresponding resistor.
5. The terminal structure of claim 2 , wherein the resistive element comprises a regular shaped resistive material layer such that the voltage between the main junction and the cutoff ring is uniformly distributed across the resistive element when the IGBT device is under normal operating conditions.
6. The terminal structure of claim 1 , wherein the resistive element comprises a high resistance value resistor such that a current flowing through the high resistance value resistor is less than a static current of the IGBT device under normal operating conditions.
7. The terminal structure of claim 1 , wherein the resistive element is disposed outside a package of the IGBT device.
8. The terminal structure of claim 1 , wherein the resistive element is disposed inside a package of the IGBT device.
9. An insulated gate bipolar transistor (IGBT) device comprising a terminal structure of claim 1 .
10. A terminal structure of an insulated gate bipolar transistor (IGBT) device, comprising:
a main junction, a cutoff ring, and a plurality of terminal rings each having a same structure and disposed between the main junction and the cutoff ring in a substrate, wherein any two adjacent terminal rings are separated by a same spacer region; and
a resistive element having a first terminal electrically connected to the main junction, a second terminal electrically connected to the cutoff ring, and a plurality of intermediate terminals each electrically connected to one of the terminal rings, wherein the resistive element comprises a regular shaped resistive material layer having a resistivity greater than 10 5 Ω-cm.
11. The terminal structure of claim 10 , wherein the resistive element comprises a resistance value distribution such that a voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings.
12. The terminal structure of claim 10 , wherein the resistive element comprises a single resistor having one or more taps such that a voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings by a corresponding tap of the one or more taps of the resistive element.
13. The terminal structure of claim 10 , wherein the resistive element comprises a plurality of resistors having a same resistance value and connected in series between the main junction and the cutoff ring such that a voltage between the main junction and the cutoff ring is uniformly distributed across the terminal rings by a corresponding resistor.
14. The terminal structure of claim 10 , wherein the regular shaped resistive material layer is configured such that a voltage between the main junction and the cutoff ring is uniformly distributed across the resistive element when the IGBT device is under normal operating conditions.
15. The terminal structure of claim 10 , wherein the resistive element comprises a high resistance value resistor such that a current flowing through the high resistance value resistor is less than a static current of the IGBT device under normal operating conditions.
16. The terminal structure of claim 10 , wherein the resistive element is disposed outside a package of the IGBT device.
17. The terminal structure of claim 10 , wherein the resistive element is disposed inside a package of the IGBT device.