IP Library › Granted Patent US 10,748,797
Granted Patent B2
US 10,748,797 · App. 15/873,971 · Granted Aug 18, 2020

Plasma parameters and skew characterization by high speed imaging

Inventors: Sidharth Bhatia (Santa Cruz, CA); Edward P. Hammond, IV (Hillsborough, CA); Bhaskar Kumar (Santa Clara, CA); Anup Kumar Singh (Santa Clara, CA); Vivek Bharat Shah (Sunnyvale, CA); Ganesh Balasubramanian (Sunnyvale, CA)
Assignee: APPLIED MATERIALS, INC.
H01L21/67253G06T7/0004H01J37/32981H01L21/3065H01J37/321H01J2237/334
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Quick Facts
Patent No.
US 10,748,797
App. No.
15/873,971
Granted
Aug 18, 2020
Kind
B2
Abstract

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Claims (32)

1. A method for monitoring plasma characteristics in a plasma processing chamber, the method comprising:

performing a first plasma process in a processing chamber at a first processing condition;

acquiring at least one image of a first plasma of the first plasma process while extinguishing the plasma;

determining a plasma parameter of the first plasma based on the at least one image, the determining the plasma parameter comprising determining a termination direction of the first plasma while extinguishing the first plasma;

modifying the first processing condition to a second processing condition for a second plasma process in response to the determined plasma parameter;

performing the second plasma process in the processing chamber at the second processing condition, the second processing condition selected such that a second plasma of the second plasma process extinguishes in a center-to-edge direction; and

extinguishing the second plasma of the second plasma process.

2. The method of claim 1 further comprising:

acquiring a second image of the plasma under the second processing condition.

3. The method of claim 1 , wherein acquiring the at least one image occurs through a first lens placed in an aperture and one of a plurality of gas-passage holes formed on a ring-shaped liner disposed within the processing chamber.

4. The method of claim 3 , wherein the first lens placed in the aperture is a wide angle lens with a focal length of about 5 mm to about 6 mm.

5. The method of claim 3 , wherein acquiring the at least one image further comprises:

observing the plasma through a viewport formed in the processing chamber, the viewport coupled to the aperture and aligned with the first lens.

6. The method of claim 5 , wherein observing the plasma through the viewport further comprises:

viewing the plasma through at least one additional lens aligned with the first lens.

7. The method of claim 3 , wherein acquiring the at least one image further comprises:

capturing images of the plasma with a camera, a first lens of the camera aligned with the first lens placed in the aperture.

8. The method of claim 7 , wherein the camera has an image capture rate of at least 50,000 frames per second.

9. A method for monitoring plasma characteristics in a plasma processing chamber, the method comprising:

performing a first plasma process in a processing chamber at a first processing condition;

acquiring at least one image of a first plasma of the first plasma process while extinguishing the plasma, the acquiring occurring through a first lens placed on an aperture coupled to one of a plurality of gas-passage holes formed on a ring-shaped liner disposed within the processing chamber;

determining a plasma parameter of the first plasma based on the at least one image, the determining the plasma parameter comprising determining a termination direction of the first plasma while extinguishing the first plasma;

modifying the first processing condition to a second processing condition for a second plasma process in response to the determined plasma parameter;

performing the second plasma process in the processing chamber at the second processing condition, the second processing condition selected such that a second plasma of the second plasma process extinguishes in a center-to-edge direction; and

extinguishing the second plasma of the second plasma process.

10. A method for monitoring plasma characteristics in a plasma processing chamber, the method comprising:

performing a first plasma process in a processing chamber at a first processing condition;

acquiring a plurality of images capturing a collapse and termination of a first plasma of the first plasma process;

determining a plasma parameter of the first plasma based on at least one of the plurality of images, the determining the plasma parameter comprising determining a termination direction of the first plasma while extinguishing the first plasma;

modifying the first processing condition to a second processing condition for a second plasma process in response to the determined plasma parameter;

performing the second plasma process in the processing chamber at the second processing condition, the second processing condition selected such that a second plasma of the second plasma process extinguishes in a center-to-edge direction; and

extinguishing the second plasma of the second plasma process.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2018
From: BHATIA, SIDHARTH; HAMMOND, EDWARD P., IV; KUMAR, BHASKAR; SINGH, ANUP KUMAR; SHAH, VIVEK BHARAT; BALASUBRAMANIAN, GANESH
To: APPLIED MATERIALS, INC.
Reel/Frame 044963/0457 →
Continuity (2)
Provisional Application 62447746 · Jan 18, 2017
Related Publication 20180204750A1 · Jul 19, 2018
Cited By (1)
US 12,738,466