IP Library Granted Patent US 10,748,892
Granted Patent B2
US 10,748,892 · App. 16/124,519 · Granted Aug 18, 2020

Display apparatus

Inventors: Jongmoo Huh (Yongin-si, KR); Dongwon Kim (Yongin-si, KR); Shinhyuk Yang (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H01L27/0296H01L27/1218H01L27/323H01L27/3262H01L51/5237H01L27/3244H01L51/0097H01L51/5256H01L2251/5338
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Quick Facts
Patent No.
US 10,748,892
App. No.
16/124,519
Granted
Aug 18, 2020
Kind
B2
Abstract

A display apparatus that can reduce defects caused by static electricity, includes a substrate unit that includes at least one organic insulating layer, at least one inorganic insulating layer, and a first conductive layer that includes doped amorphous silicon (a-Si) that is disposed between the at least one organic insulating layer and the at least one inorganic insulating layer; and a thin film transistor unit disposed on the substrate portion and that includes a thin film transistor.

Claims (43)

1. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers, and a barrier layer that includes amorphous silicon (a-Si); and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor.

2. The display apparatus of claim 1 , wherein the first conductive layer is doped with an n-type dopant or a p-type dopant.

3. The display apparatus of claim 1 , wherein the first conductive layer is doped, and the thin film transistor unit is disposed directly on the second inorganic insulating layer.

4. The display apparatus of claim 1 , wherein the first conductive layer is disposed between the first inorganic insulating layer and the second organic insulating layer.

5. The display apparatus of claim 1 , wherein the barrier layer is disposed between at least one of the first organic insulating layer and the first inorganic insulating layer, the first inorganic insulating layer and the second organic insulating layer, or the second organic insulating layer and the second inorganic insulating layer.

6. The display apparatus of claim 5 , wherein at least one the first or second organic insulating layers, or first or second inorganic insulating layers is disposed between the first conductive layer and the barrier layer.

7. The display apparatus of claim 1 , wherein the first conductive layer is disposed on an entire surface of the substrate unit.

8. The display apparatus of claim 1 , wherein the thin film transistor comprises a semiconductor layer, and a gate electrode that at least partially overlaps the semiconductor layer, and the semiconductor layer is disposed on the at least one inorganic insulating layer to directly contact the at least one inorganic insulating layer.

9. The display apparatus of claim 1 , wherein the substrate unit is flexible.

10. The display apparatus of claim 1 , further comprising a display device disposed on the thin film transistor unit that is electrically connected to the thin film transistor.

11. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, and a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers; and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor;

wherein the first conductive layer is disposed between the second organic insulating layer and the second inorganic insulating layer.

12. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, and a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers; and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor;

wherein the first conductive layer is disposed between the first organic insulating layer and the first inorganic insulating layer.

13. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, and a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers; and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor;

wherein the first conductive layer is disposed under the first organic insulating layer.

14. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, and a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers; and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor;

wherein the substrate unit further comprises a second conductive layer that includes doped amorphous silicon (a-Si).

15. The display apparatus of claim 14 , wherein the second conductive layer is disposed between at least one of the first organic insulating layer and the first inorganic insulating layer, the first inorganic insulating layer and the second organic insulating layer, or the second organic insulating layer and the second inorganic insulating layer.

16. The display apparatus of claim 14 , wherein at least one of the first or second organic insulating layers, or first or second inorganic insulating layers is disposed between the first conductive layer and the second conductive layer.

17. The display apparatus of claim 14 , wherein the second conductive layer is disposed under the first organic insulating layer.

18. The display apparatus of claim 14 , wherein the second conductive layer is doped with an n-type dopant or a p-type dopant.

19. A display apparatus comprising:

a substrate unit that includes a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, and a second inorganic insulating layer on the second organic insulating layer, a first conductive layer that includes doped amorphous silicon (a-Si) and that is disposed between at least one of the first and second organic insulating layers and at least one of the first and second inorganic insulating layers, and a second conductive layer that includes doped amorphous silicon (a-Si),

wherein the first conductive layer is disposed on an entire surface of the substrate unit, and the substrate unit is flexible.

20. The display apparatus of claim 19 , further comprising:

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor, and

a display device disposed on the thin film transistor unit that is electrically connected to the thin film transistor,

wherein the thin film transistor comprises a semiconductor layer and a gate electrode that at least partially overlaps the semiconductor layer, and the semiconductor layer is directly disposed on the second inorganic insulating layer to directly contact the second inorganic insulating layer.

21. A display apparatus, comprising:

a substrate unit that comprises a first organic insulating layer, a first inorganic insulating layer on the first organic insulating layer, a second organic insulating layer on the first inorganic insulating layer, a second inorganic insulating layer on the second organic insulating layer, and a first conductive layer including amorphous silicon (a-Si) and disposed under the first organic insulating layer; and

a thin film transistor unit disposed on the substrate unit and that comprises a thin film transistor,

wherein the first conductive layer is disposed between the first organic insulating layer and the first inorganic insulating layer, and directly contact with the first organic insulating layer and first inorganic insulating layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2018
From: HUH, JONGMOO; KIM, DONGWON; YANG, SHINHYUK
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 046812/0450 →
Priority Claims (1)
KR 10-2017-0114702 · Sep 7, 2017 · national
Continuity (1)
Related Publication 20190074276A1 · Mar 7, 2019