Semiconductor device and method for fabricating the same
A semiconductor device includes a plurality of semiconductor fins, an epitaxy structure, a capping layer, and a contact. The epitaxy structure adjoins the semiconductor fins. The epitaxy structure has a plurality of protrusive portions. The capping layer is over a sidewall of the epitaxy structure. The contact is in contact with the epitaxy structure and the capping layer. The contact has a portion between the protrusive portions. The portion of the contact between the protrusive portions has a bottom in contact with the epitaxy structure.
1. A semiconductor device, comprising:
a plurality of semiconductor fins;
an epitaxy structure adjoining the semiconductor fins, wherein the epitaxy structure has a plurality of protrusive portions;
a capping layer over a sidewall of the epitaxy structure;
a contact in contact with the epitaxy structure and the capping layer, wherein the contact has a portion between the protrusive portions, and said portion of the contact between the protrusive portions has a bottom in contact with the epitaxy structure;
a first isolation structure between the semiconductor fins; and
a second isolation structure and a third isolation structure, wherein the semiconductor fins are between the second isolation structure and the third isolation structure, and a bottom of the second isolation structure is lower than a bottom of the first isolation structure.
2. The semiconductor device of claim 1 , wherein the capping layer is conformal to the sidewall of the epitaxy structure.
3. The semiconductor device of claim 1 , wherein the bottom of said portion of the contact between the protrusive portions is lower than an interface between the capping layer and the contact.
4. The semiconductor device of claim 1 , wherein an entire top surface of the capping layer is in contact with the contact.
5. The semiconductor device of claim 1 , wherein said portion of the contact between the protrusive portions tapers toward the epitaxy structure.
6. The semiconductor device of claim 1 , wherein a bottom surface of the epitaxy structure is lower than a top surface of the second isolation structure.
7. The semiconductor device of claim 1 , wherein a bottom surface of the epitaxy structure is lower than a top surface of the first isolation structure.
8. The semiconductor device of claim 1 , wherein the capping layer is made of a semiconductor material.
9. The semiconductor device of claim 1 , wherein the capping layer comprises germanium.
10. The semiconductor device of claim 1 , wherein a top of the capping layer is lower than a top of the epitaxy structure.
11. The semiconductor device of claim 1 , wherein a dopant concentration of the capping layer is less than a dopant concentration of the epitaxy structure.
12. A semiconductor device, comprising:
a plurality of semiconductor fins;
an epitaxy structure adjoining the semiconductor fins, wherein the epitaxy structure has a W-shape cross section and comprises germanium;
a capping layer conformal to a sidewall of the epitaxy structure, wherein the capping layer is made of a semiconductor material, and a germanium concentration of the epitaxy structure is higher than a germanium concentration of the capping layer; and
a contact in contact with the epitaxy structure and the capping layer.
13. The semiconductor device of claim 12 , wherein the capping layer comprises germanium.
14. The semiconductor device of claim 12 , wherein the capping layer and the epitaxy structure comprise boron, and a boron concentration of the capping layer is lower than a boron concentration of the epitaxy structure.
15. The semiconductor device of claim 12 , wherein the epitaxy structure has a sidewall that has a portion extending upwards and outwardly in a direction from a bottom to a top of said portion of the sidewall of the epitaxy structure, and the capping layer has a portion extending along said portion of the sidewall of the epitaxy structure.
16. A semiconductor device, comprising:
a plurality of semiconductor fins;
an epitaxy structure adjoining the semiconductor fins, wherein the epitaxy structure has a plurality of protrusive portions;
a first capping layer conformal to a sidewall of the epitaxy structure, wherein the first capping layer and the epitaxy structure comprise boron, and a boron concentration of the first capping layer is lower than a boron concentration of the epitaxy structure; and
a contact above the epitaxy structure, wherein the contact is in contact with the sidewall of the epitaxy structure and a top surface of the first capping layer.
17. The semiconductor device of claim 16 , wherein the first capping layer is made of a semiconductor material.
18. The semiconductor device of claim 16 , further comprising an isolation structure in contact with the first capping layer and the sidewall of the epitaxy structure.
19. The semiconductor device of claim 16 , wherein the epitaxy structure has a recess between the protrusive portions, and the semiconductor device further comprises a second capping layer conformal to sidewalls of the recess.
20. The semiconductor device of claim 19 , wherein the contact is further in contact with the sidewalls of the recess of the epitaxy structure.