Integration scheme for non-volatile memory on gate-all-around structure
A integrated device including a non-volatile memory (NVM) and a nanosheet field effect transistor (FET) and a method of fabricating the device include patterning fins for a channel region of the NVM and the FET. The method also includes depositing an organic planarization layer (OPL) and a block mask to protect the fins for the channel region of the FET, conformally depositing a set of layers that make up an NVM structure in conjunction with the channel region of the NVM while protecting the fins for the channel region of the FET with the OPL and the block mask, and removing the OPL and the block mask protecting the fins for the channel region of the FET. Source and drain regions of the NVM and the FET are formed, and a gate of the FET is formed while protecting the NVM by depositing another OPL and another block mask.
1. An integrated device including a non-volatile memory (NVM) and a nanosheet field effect transistor (FET), the device comprising:
fins of a channel region of the NVM formed on a substrate;
fins of a channel region of the nanosheet FET formed on the substrate;
a set of layers that make up an NVM structure conformally covering only the fins of the channel region of the NVM;
source and drain regions between the fins of the channel region of the NVM and the fins of the channel region of the nanosheet FET; and
a gate formed above only the fins of the channel region of the nanosheet FET.
2. The device according to claim 1 , wherein the fins of the channel region of the NVM include alternating silicon and silicon germanium.
3. The device according to claim 1 , wherein the fins of the channel region of the NVM include silicon germanium.
4. The device according to claim 1 , wherein the set of layers that make up the NVM structure include silicon oxide nitride directly on the fins for the channel region of the NVM.
5. The device according to claim 4 , wherein the set of layers that make up the NVM structure include hafnium dioxide on the silicon oxide nitride.
6. The device according to claim 5 , wherein the set of layers that make up the NVM structure include silicon dioxide on the hafnium dioxide.
7. The device according to claim 1 , further comprising gates formed above the fins of the channel region of the nanosheet FET.
8. The device according to claim 1 , further comprising contacts formed above the source and drain regions of the NVM and the nanosheet FET.
9. The device according to claim 1 , further comprising polysilicon formed above the fins of the channel region of the NVM, wherein the polysilicon is part of the NVM structure.
10. The device according to claim 9 , further comprising contacts formed above the polysilicon.