IP Library › Granted Patent US 10,753,917
Granted Patent B2
US 10,753,917 · App. 15/977,629 · Granted Aug 25, 2020

Hydrogen sensing device

Inventors: Yuan-Chieh Tseng (Hsinchu, TW); Jaw-Yeu Liang (Hsinchu, TW); Yun-Chieh Pai (Hsinchu, TW); Yu-Jung Chou (Hsinchu, TW); Wen-Chin Lin (Hsinchu, TW); Chih-Huang Lai (Hsinchu, TW)
Assignee: NATIONAL CHIAO TUNG UNIVERSITY
G01N33/005G01N27/12G01N31/22G01N33/0059G01N33/20
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Quick Facts
Patent No.
US 10,753,917
App. No.
15/977,629
Granted
Aug 25, 2020
Kind
B2
Abstract

A hydrogen sensing device includes a multi-layered structure member. The multi-layered structure member includes a stack of alternatingly disposed magnetic layers and non-ferromagnetic layers. One of the magnetic layers is a topmost layer of the multi-layered structure member. The topmost layer includes a palladium-based material to detect hydrogen.

Claims (13)

1. A hydrogen sensing device, comprising:

a multi-layered structure member including a stack, of alternatingly disposed magnetic layers and non-ferromagnetic layers,

wherein one of said magnetic layers is a topmost layer of said multi-layered structure member; and

wherein said topmost layer includes a palladium-based material to detect hydrogen; and

wherein the palladium-based material includes a palladium-based alloy that includes 50% to 95% of palladium and a balance of cobalt.

2. The hydrogen sensing device of claim 1 , wherein each of said magnetic layers includes the palladium-based material.

3. The hydrogen sensing device of claim 1 , wherein said non-ferromagnetic layers include a non-ferromagnetic material selected from the group consisting of copper (Cu), silver (Ag), gold (Au), chromium (Cr), aluminum (Al), tantalum (Ta) and alloys thereof.

4. The hydrogen sensing device of claim 3 , wherein the non-ferromagnetic material includes Cu.

5. The hydrogen sensing device of claim 1 , wherein each of said magnetic layers and said non-ferromagnetic layers has a thickness ranging from 0.5 nm to 5 nm.

6. The hydrogen sensing device of claim 1 , wherein a total number of said magnetic layers and said non-ferromagnetic layers ranges from 3 to 50.

7. The hydrogen sensing device of claim 1 , further comprising a substrate that is connected to a bottom surface of said multi-layered structure member opposite to said topmost layer.

8. The hydrogen sensing device of claim 7 , further comprising a seed layer formed between said substrate and said bottom surface of said multi-layered structure member.

9. The hydrogen sensing device of claim 8 , wherein said seed layer includes iron.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 11, 2018
From: TSENG, YUAN-CHIEH; LIANG, JAW-YEU; PAI, YUN-CHIEH; CHOU, YU-JUNG; LIN, WEN-CHIN; LAI, CHIH-HUANG
To: NATIONAL CHIAO TUNG UNIVERSITY
Reel/Frame 045782/0218 →
Priority Claims (1)
TW 106115749 A · May 12, 2017 · national
Continuity (1)
Related Publication 20180328902A1 · Nov 15, 2018