Substrate treating apparatus
The inventive concepts provide a substrate treating apparatus. The apparatus includes a process chamber, a substrate support unit, a gas supply unit, a microwave applying unit, an antenna plate, a slow-wave plate, a dielectric plate, and an exhaust baffle, and a liner. The liner includes a body having a ring shape facing an inner sidewall of the process chamber, and a flange extending from the body into a wall portion of the process chamber. The flange prevents an electric field of a microwave and a process gas from being provided into a gap between the process chamber and the body. Thus, it is possible to inhibit particles from being generated by damage of the inner sidewall of the process chamber by plasma, and drift distances of the particles can be reduced to inhibit the particles from reaching a substrate.
1. A substrate treating apparatus comprising:
a process chamber including a body having an open top end and a cover sealed about the open top end of the body to define a treatment space within the process chamber, wherein the body forms a plurality of gas supply holes through a vertical side of the body;
a substrate supporter configured to support a substrate in the process chamber; a gas supplier configured to supply a process gas into the process chamber via the plurality of gas supply holes;
a dielectric plate provided as a top wall of the treatment space;
an antenna plate disposed on the dielectric plate;
a microwave applicator configured to apply a microwave to the antenna plate; and a liner installed on an inner sidewall of the process chamber, wherein the liner comprises:
a body having a ring shape facing the inner sidewall of the process chamber, forming a vertical gap between the inner sidewall and the body of the liner; and
a flange extending outward from an outer sidewall of the body of the liner into a wall portion of the process chamber such that the flange abuts and extends at least partially between the body of the liner and the cover of the process chamber and blocks the vertical gap,
wherein the flange comprises:
a base formed of a metal material; and
a dielectric layer coated on the base to define the surface of the flange formed of the dielectric material, wherein the dielectric layer surrounds the base, and
wherein the liner forms a plurality of through holes there-through, each of which faces a corresponding one of the plurality of gas supply holes.
2. The substrate treating apparatus of claim 1 , wherein the flange is provided on an outer sidewall of a top end portion of the liner.
3. The substrate treating apparatus of claim 1 , wherein the process gas is supplied via the plurality of through holes through the inner sidewall and the body of the liner.
4. The substrate treating apparatus of claim 1 , wherein the flange provides an outer sidewall of a top end portion of the liner.
5. The substrate treating apparatus of claim 1 , wherein the flange prevents the microwave from the vertical gap.