Self-limiting selective etching systems and methods
Exemplary etching methods may include flowing a hydrogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the hydrogen-containing precursor and the fluorine-containing precursor. The substrate may define a trench, and a layer of an oxygen-containing material may be disposed within the trench and exposed on the substrate. The methods may include halting delivery of the hydrogen-containing precursor. The methods may also include removing the oxygen-containing material.
1. An etching method comprising:
flowing a hydrogen-containing precursor into a substrate processing region of a semiconductor processing chamber;
flowing a fluorine-containing precursor into the substrate processing region;
contacting a substrate housed in the substrate processing region with the hydrogen-containing precursor and the fluorine-containing precursor, wherein the substrate defines a trench, wherein a layer of an oxygen-containing material is disposed within the trench and exposed on the substrate;
halting delivery of the hydrogen-containing precursor for a remainder of the etching method while continuing to flow the fluorine-containing precursor; and
removing the oxygen-containing material, during the continued flowing of the fluorine-containing precursor.
2. The etching method of claim 1 , wherein the hydrogen-containing precursor is maintained fluidly isolated from a plasma formable within the semiconductor processing chamber in a remote plasma region of the semiconductor processing chamber.
3. The etching method of claim 1 , wherein the hydrogen-containing precursor comprises water vapor.
4. The etching method of claim 1 , wherein the fluorine-containing precursor comprises anhydrous hydrogen fluoride.
5. The etching method of claim 1 , wherein the substrate further comprises an exposed region of hafnium oxide, zirconium oxide, or aluminum oxide.
6. The etching method of claim 1 , wherein the oxygen-containing material is selected from the group consisting of silicon dioxide, silicon oxycarbide, silicon oxynitride, and silicon oxycarbonitride.
7. The etching method of claim 1 , wherein the etching method is performed at a temperature below or about 0° C.
8. The etching method of claim 7 , wherein the etching method is performed at a temperature above a freezing point of water at operating chamber conditions.
9. The etching method of claim 1 , wherein the fluorine-containing precursor is flowed at a flow rate below or about 1 slm during the etching method.
10. The etching method of claim 9 , wherein the fluorine-containing precursor is pulsed during the etching method.
11. The etching method of claim 10 , wherein the fluorine-containing precursor is pulsed off for at least two seconds during each cycle of pulsing performed during the etching method.
12. The etching method of claim 1 , wherein the substrate processing region is maintained plasma free during the etching method.
13. A removal method comprising:
flowing water vapor into a substrate processing region at a temperature below or about 0° C.;
flowing a fluorine-containing precursor into the substrate processing region of a semiconductor processing chamber;
contacting a substrate housed in the substrate processing region with the water vapor and the fluorine-containing precursor, wherein the substrate defines a trench, wherein a layer of an oxygen-containing material is disposed within the trench and exposed on the substrate;
halting the flow of water vapor for a remainder of the removal method while maintaining the flow of the fluorine-containing precursor; and
removing the oxygen-containing material, during the maintained flow of the fluorine-containing precursor.
14. The removal method of claim 13 , wherein the water vapor is delivered into the substrate processing region at a temperature above or about −40° C.
15. The removal method of claim 13 , wherein the fluorine-containing precursor is flowed at a rate of less than or about 500 sccm during the removal method.
16. The removal method of claim 13 , wherein the fluorine-containing precursor is delivered in pulses, wherein the delivery is characterized by a first period of time during which the fluorine-containing precursor is flowed, and a second period of time during which the fluorine-containing precursor flow is halted.
17. The removal method of claim 16 , wherein the first period of time and the second period of time are both greater than or about 2 seconds.
18. The removal method of claim 13 , wherein the fluorine-containing precursor is anhydrous hydrogen fluoride, and wherein the substrate processing region is maintained plasma-free during the removal method.
19. An etching method comprising:
flowing a hydrogen-containing precursor into a substrate processing region of a semiconductor processing chamber while maintaining the substrate process region at a temperature between about −50° C. and about 0° C.;
flowing anhydrous hydrogen fluoride into the substrate processing region;
contacting a substrate housed in the substrate processing region with the hydrogen-containing precursor and the anhydrous hydrogen fluoride, wherein the substrate defines a trench, wherein a layer of an oxygen-containing material is disposed within the trench and exposed on the substrate;
halting the flow of the hydrogen-containing precursor for a remainder of the etching method while continuing to flow the anhydrous hydrogen fluoride; and
removing the oxygen-containing material, during the continued flowing of the anhydrous hydrogen fluoride.