Inorganic wafer having through-holes attached to semiconductor wafer
A process comprises bonding a semiconductor wafer to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. After the bonding, a damage track is formed in the inorganic wafer using a laser that emits the wavelength of light. The damage track in the inorganic wafer is enlarged to form a hole through the inorganic wafer by etching. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer. An article is also provided, comprising a semiconductor wafer bonded to an inorganic wafer. The semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent. The inorganic wafer has a hole formed through the inorganic wafer. The hole terminates at an interface between the semiconductor wafer and the inorganic wafer.
1. An article, comprising:
a semiconductor wafer bonded to an inorganic wafer, wherein the semiconductor wafer is opaque to a wavelength of light to which the inorganic wafer is transparent,
the inorganic wafer having a hole formed therethrough, the hole terminating at a surface of the semiconductor wafer, and
a thickness of the semiconductor wafer being greater than a thickness of the inorganic wafer.
2. The article of claim 1 , wherein the semiconductor wafer is a bare semiconductor wafer.
3. The article of claim 1 , wherein the semiconductor wafer is a silicon wafer.
4. The article of claim 1 , wherein the inorganic wafer has a resistivity of at least 10 5 Ω-m at room temperature and a breakdown voltage of at least 1 kV for the thickness of 0.5 mm at room temperature.
5. The article of claim 1 , wherein the inorganic wafer is made of a material selected from the group consisting of alumino-borosilicate glass, fused silica, and sapphire.
6. The article of claim 1 , wherein the thickness of the inorganic wafer is from 10 μm to 1 mm.
7. The article of claim 6 , wherein the thickness of the inorganic wafer is from 50 μm to 250 μm.
8. The article of claim 1 , wherein the hole is metalized.
9. The article of claim 8 , wherein a diameter of the hole at a surface of the inorganic wafer opposite an interface between the semiconductor wafer and the inorganic wafer is from 4 μm to 100 μm.
10. The article of claim 1 , wherein the average surface roughness (Ra) of the inorganic wafer at an interface between the semiconductor wafer and the inorganic wafer is less than 1 nm.
11. The article of claim 1 , wherein the semiconductor wafer is removably bonded to the inorganic wafer.
12. The article of claim 1 , wherein the surface of the semiconductor wafer, at which the hole terminates, contacts the inorganic wafer.
13. The article of claim 1 , wherein the semiconductor wafer is bonded to the inorganic wafer at an interface, the interface being a direct connection between the semiconductor wafer and the inorganic wafer.