Semiconductor device including partially enlarged channel hole
A semiconductor device includes a lower stack structure on a substrate, an upper stack structure on the lower stack structure, and a channel structure in a channel hole formed through the upper stack structure and the lower stack structure. The channel hole includes a lower channel hole in the lower stack structure, an upper channel hole in the upper stack structure, and a partial extension portion adjacent to an interface between the lower stack structure and the upper stack structure. The partial extension portion is in fluid communication with the lower channel hole and the upper channel hole. A lateral width of the partial extension portion may be greater than a lateral width of the upper channel hole adjacent to the partial extension portion and greater than a lateral width of the upper channel hole adjacent to the partial extension portion.
1. A semiconductor device comprising:
a substrate;
a lower stack structure on the substrate, the lower stack structure including a plurality of lower insulating layers and a plurality of lower conductive layers that are alternately stacked on the substrate;
an upper stack structure on the lower stack structure, the upper stack structure including a plurality of upper insulating layers and a plurality of upper conductive layers that are alternately stacked on the lower stack structure,
the upper stack structure and the lower stack structure defining a channel hole that extends through the upper stack structure and the lower stack structure,
the channel hole including a lower channel hole defined by the lower stack structure, an upper channel hole defined by the upper stack structure, and a partial extension portion adjacent to an interface between the lower stack structure and the upper stack structure,
the partial extension portion being a portion of the channel hole defined by an uppermost lower insulating layer and a lowermost upper insulating layer among the plurality of lower insulating layers and the plurality of upper insulating layers,
the partial extension portion being in fluid communication with the lower channel hole and the upper channel hole,
a lateral width of the partial extension portion being greater than a lateral width of the upper channel hole at a region adjacent to the partial extension portion,
the lateral width of the partial extension portion being greater than a lateral width of the lower channel hole at the region adjacent to the partial extension portion, and
the lateral width of the partial extension portion being greater than the lateral width of the upper channel hole at a location extending through a lowermost one of the plurality of upper conductive layers; and
a channel structure in the channel hole.
2. The semiconductor device of claim 1 , wherein an uppermost end of the partial extension portion is at a higher level than the interface, and wherein the uppermost end of the partial extension portion is at a lower level than a lowermost surface of the lowermost one of the plurality of upper conductive layers.
3. The semiconductor device of claim 1 , wherein a lowermost end of the partial extension portion is at a lower level than the interface.
4. The semiconductor device of claim 1 , wherein the channel structure includes
a channel pattern;
a tunnel insulating layer surrounding an outside of the channel pattern;
a charge storage layer surrounding an outside of the tunnel insulating layer;
a lower blocking layer between the charge storage layer and the lower stack structure; and
an upper blocking layer between the charge storage layer and the upper stack structure.
5. The semiconductor device of claim 4 , wherein the upper blocking layer is spaced to be apart from the lower blocking layer.
6. The semiconductor device of claim 4 , wherein the charge storage layer in the partial extension portion directly contacts the lowermost upper insulating layer.
7. The semiconductor device of claim 4 , wherein the charge storage layer in the partial extension portion directly contacts the uppermost lower insulating layer.
8. The semiconductor device of claim 1 , wherein
the channel structure includes a channel pattern, a charge storage layer, a tunnel insulating layer surrounding an outside of the channel pattern, and an inner blocking layer,
the charge storage layer surrounds an outside of the tunnel insulating layer, and
the inner blocking layer surrounds an outside of the charge storage layer.
9. The semiconductor device of claim 8 , further comprising:
a lower blocking layer between the inner blocking layer and the lower stack structure; and
an upper blocking layer between the inner blocking layer and the upper stack structure.
10. A semiconductor device comprising:
a substrate;
a lower stack structure on the substrate, the lower stack structure including a plurality of lower insulating layers and a plurality of lower conductive layers that are alternately stacked on the substrate;
an upper stack structure on the lower stack structure, the upper stack structure including a plurality of upper insulating layers and a plurality of upper conductive layers that are alternately stacked on the lower stack structure,
the upper stack structure and the lower stack structure defining a channel hole that extends through the upper stack structure and the lower stack structure; and
a channel structure inside the channel hole, the channel structure including,
a channel pattern,
a tunnel insulating layer surrounding an outside of the channel pattern,
a charge storage layer surrounding an outside of the tunnel insulating layer,
a lower blocking layer between the charge storage layer and the lower stack structure, and
an upper blocking layer between the charge storage layer and the upper stack structure, the upper blocking layer being spaced to be apart from the lower blocking layer.
11. The semiconductor device of claim 10 , wherein a lowermost end of the upper blocking layer is at a higher level than an interface between the lower stack structure and the upper stack structure.
12. The semiconductor device of claim 10 , wherein an uppermost end of the lower blocking layer is at a lower level than an interface between the lower stack structure and the upper stack structure.
13. The semiconductor device of claim 10 , wherein the charge storage layer, between the upper blocking layer and the lower blocking layer, directly contacts a lowermost layer of the plurality of upper insulating layers.
14. The semiconductor device of claim 10 , wherein the charge storage layer, between the upper blocking layer and the lower blocking layer, directly contacts an uppermost layer of the plurality of lower insulating layers.
15. The semiconductor device of claim 10 , wherein
the channel hole includes a lower channel hole, an upper channel hole, and a partial extension portion,
the lower channel hole is defined by the lower stack structure,
the upper channel hole is defined by the upper stack structure,
the partial extension portion is adjacent to an interface between the lower stack structure and the upper stack structure,
the partial extension portion is a portion of the channel hole defined by an uppermost lower insulating layer and a lowermost upper insulating layer among the plurality of lower insulating layers and the plurality of upper insulating layers, the partial extension portion is in fluid communication with the lower channel hole and the upper channel hole,
a lateral width of the partial extension portion is greater than a lateral width of the upper channel hole at a region adjacent to the partial extension portion, and
the lateral width of the partial extension portion is greater than a lateral width of the lower channel hole at the region adjacent to the partial extension portion.
16. A semiconductor device comprising:
a substrate;
a lower stack structure on the substrate, the lower stack structure including a plurality of lower insulating layers and a plurality of lower conductive layers that are alternately stacked on the substrate;
an upper stack structure on the lower stack structure, the upper stack structure including a plurality of upper insulating layers and a plurality of upper conductive layers that are alternately stacked on the lower stack structure,
the upper stack structure and the lower stack structure defining a channel hole that extends through the upper stack structure and the lower stack structure; and
a channel structure inside the channel hole, the channel structure including,
a channel pattern,
a tunnel insulating layer surrounding an outside of the channel pattern,
a charge storage layer surrounding an outside of the tunnel insulating layer,
a lower blocking layer between the charge storage layer and the lower stack structure, and
an upper blocking layer between the charge storage layer and the upper stack structure, the upper blocking layer being spaced to be apart from the lower blocking layer; and
an inner blocking layer surrounding an outside of the charge storage layer, wherein
the inner blocking layer is between the charge storage layer and the lower stack structure, and
the inner blocking layer is between the charge storage layer and the upper stack structure.
17. The semiconductor device of claim 16 , wherein the inner blocking layer, between the upper blocking layer and the lower blocking layer, directly contacts a lowermost layer of the plurality of upper insulating layers.
18. The semiconductor device of claim 17 , wherein the inner blocking layer extends between the lowermost layer of the plurality of upper insulating layers and the charge storage layer.
19. The semiconductor device of claim 16 , wherein the inner blocking layer, between the upper blocking layer and the lower blocking layer, contacts an uppermost layer of the plurality of lower insulating layers.
20. The semiconductor device of claim 19 , wherein the inner blocking layer is between the uppermost layer of the plurality of lower insulating layers and the charge storage layer.