Thin film diamond coating system and method
Disclosed herein is a transparent glass system that includes an optical grade silicon substrate, and a nanocrystalline diamond film on the silicon substrate, the diamond film deposited using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added. Further disclosed is a method of fabricating transparent glass that includes the steps of seeding an optical grade silicon substrate and forming a nanocrystalline diamond film on the silicon substrate using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added.
1. A transparent glass for electronics, comprising:
a BK7 silicon substrate;
a nanocrystalline diamond film of approximately 113 nm on the BK7 silicon substrate, the diamond film deposited using a chemical vapor deposition system having a reactor in which methane, hydrogen and argon source gases are added wherein the transmission of light through the silicon substrate and the nanocrystalline diamond film at 550 nm wavelength is in excess of 0.90 and the transmission of light between 350 nm and 450 nm wavelength is less than 0.80 and the transmission of light between 750 nm and 850 am is less than 0.80.
2. The transparent glass of claim 1 , wherein the reactor is a microwave plasma reactor.
3. The transparent glass of claim 1 , wherein the reactor is a hot filament reactor.
4. The transparent glass of claim 1 , wherein the substrate is seeded with nanocrystalline diamond prior to the deposition of the diamond film.
5. The transparent glass of claim 1 , wherein the reactor is operated at temperatures less than 450 degrees Celsius.
6. The transparent glass of claim 1 , wherein the diamond film is less than on micron.
7. The transparent glass of claim 1 , wherein the substrate is fused silica.
8. The transparent glass of claim 1 , wherein the substrate is quartz.
9. The transparent glass of claim 1 , wherein the substrate includes sapphire.
10. The transparent glass of claim 1 , wherein the methane, hydrogen and argon source gases are at concentrations of: 300 SCCM argon, 3 SCCM methane), 4 SCCM H2 hydrogen.