IP Library › Granted Patent US 10,763,071
Granted Patent B2
US 10,763,071 · App. 15/995,913 · Granted Sep 1, 2020

Compact high energy ion implantation system

Inventor: Frank Sinclair (Boston, MA)
Assignee: Varian Semiconductor Equipment Associates, Inc.
H01J37/05H01J37/3171H05H9/00H01J2237/31701
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Quick Facts
Patent No.
US 10,763,071
App. No.
15/995,913
Granted
Sep 1, 2020
Kind
B2
Abstract

An apparatus may include an ion source, arranged to generate an ion beam at a first ion energy. The apparatus may further include a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy. The apparatus may include a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.

Claims (30)

1. An apparatus, comprising:

an ion source and extraction system, arranged to generate an ion beam at a first ion energy;

a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to a second ion energy, the second ion energy being greater than the first ion energy; and

a linear accelerator, disposed downstream of the DC accelerator column, the linear accelerator arranged to accelerate the ion beam to a third ion energy, greater than the second ion energy.

2. The apparatus of claim 1 , wherein the linear accelerator comprises at least one triple gap accelerator stage.

3. The apparatus of claim 2 , wherein the linear accelerator comprises at least three triple gap accelerator stages.

4. The apparatus of claim 1 , wherein the linear accelerator comprises at least one accelerator stage, comprising a resonator, and a high frequency generator, coupled to the resonator, the high frequency generator producing a signal having a frequency greater than 20 MHz.

5. The apparatus of claim 4 , wherein the signal comprises a frequency of 40 MHz.

6. The apparatus of claim 1 , the linear accelerator further comprising a buncher, disposed between the DC accelerator column and the linear accelerator.

7. The apparatus of claim 1 , wherein the linear accelerator comprises a plurality of accelerator stages, wherein at least one accelerator stage is coupled to a first voltage source to receive a first voltage signal, wherein at least one other accelerator stage is coupled to receive a second voltage signal, out-of phase with respect to the first voltage signal.

8. The apparatus of claim 1 , wherein the second ion energy is 200 keV or greater, and wherein the third energy is 1 MeV or greater.

9. A method for producing a high energy ion beam, comprising:

generating an ion beam at an ion source at a low ion energy;

accelerating the ion beam through a DC accelerator column to an intermediate ion energy, the intermediate ion energy being greater than 200 keV; and

accelerating the ion beam in a linear accelerator, disposed downstream of the DC accelerator column, to a high energy, greater than 1 MeV.

10. The method of claim 9 ,

wherein the linear accelerator comprises at least one triple gap accelerator stage.

11. The method of claim 10 , wherein the linear accelerator comprises at least three triple gap accelerator stages.

12. The method of claim 9 , wherein the linear accelerator comprises at least one accelerator stage, comprising a resonator, and a 40 MHz generator, coupled to the resonator.

13. The method of claim 9 , the linear accelerator further comprising a buncher, disposed between the DC accelerator column and the linear accelerator.

14. The method of claim 9 , wherein the linear accelerator comprises a plurality of accelerator stages, wherein the accelerating the ion beam in the linear accelerator comprises: applying a first voltage signal to a first accelerator stage of the linear accelerator; and applying a second voltage signal to a second accelerator stage of the linear accelerator, wherein the second voltage signal is out-of phase with respect to the first voltage signal.

15. The method of claim 9 , wherein the linear accelerator comprises a plurality of accelerator stages, driven by a plurality of radio frequency voltage signals, respectively.

16. The method of claim 15 , wherein a frequency of the plurality of radio frequency voltage signals in 40 MHz.

17. The method of claim 9 , further comprising directing the ion beam through an analyzer between the DC accelerator column and the linear accelerator.

18. A compact high energy ion implantation system, comprising:

an ion source and extraction system, arranged to generate an ion beam at a first energy;

a DC accelerator column, disposed downstream of the ion source, and arranged to accelerate the ion beam to an intermediate ion energy, the intermediate ion energy being greater than 200 keV;

an analyzer, disposed downstream of the DC accelerator column, and arranged to alter a trajectory of the ion beam; and

a linear accelerator, disposed downstream of the analyzer, the linear accelerator arranged to accelerate the ion beam to a high energy, greater than 1 MeV.

19. The compact high energy ion implantation system of claim 18 , wherein the linear accelerator comprises a plurality of triple gap accelerator stages.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 6, 2018
From: SINCLAIR, FRANK
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 047423/0257 →
Continuity (1)
Related Publication 20190371562A1 · Dec 5, 2019