Semiconductor device and method of manufacturing the same

1. A semiconductor device comprising:

a base substrate;

a first thin film transistor disposed on the base substrate, wherein the first thin film transistor comprises a first input electrode, a first output electrode, a first control electrode, and a first channel of a first monolayer of a first oxide semiconductor pattern comprising a crystalline oxide semiconductor;

a second thin film transistor disposed on the base substrate, wherein the second thin film transistor comprises a second input electrode, a second output electrode, a second control electrode, and a second channel of a second monolayer of a second oxide semiconductor pattern which comprises an oxide semiconductor having a crystal structure different from a crystal structure of the crystalline oxide semiconductor of the first oxide semiconductor pattern; and

a plurality of insulating layers disposed on the base substrate.

2. The semiconductor device of claim 1 , wherein

the first control electrode has a voltage level lower than a voltage level of the first output electrode when the first thin film transistor is turned off,

the second control electrode has a voltage level higher than a voltage level of the second output electrode when the second thin film transistor is turned off.

3. The semiconductor device of claim 2 , further comprising:

a scan line connected to the first control electrode;

a data line connected to the first input electrode; and

an organic light emitting diode electrically connected to the second output electrode.

4. The semiconductor device of claim 2 , further comprising:

a light shielding pattern disposed between the based substrate and the first control electrode.

5. The semiconductor device of claim 1 , wherein the second oxide semiconductor pattern further comprises an amorphous oxide semiconductor.

6. The semiconductor device of claim 5 , wherein the first and second oxide semiconductor patterns comprise an oxide of a same material.

7. The semiconductor device of claim 1 , wherein

the plurality of insulating layers comprises a first intermediate insulating layer, and a second intermediate insulating layer,

one of the first intermediate insulating layer and the second intermediate insulating layer is disposed between the first control electrode and the first oxide semiconductor pattern and between the second control electrode and the second oxide semiconductor pattern, and

the other of the first intermediate insulating layer and the second intermediate insulating layer is disposed either between the first control electrode and the first oxide semiconductor pattern or between the second control electrode and the second oxide semiconductor pattern.

8. The semiconductor device of claim 7 , wherein each of the first and second intermediate insulating layers comprises an inorganic layer.

9. The semiconductor device of claim 7 , wherein each of the first and second intermediate insulating layers comprises a silicon oxide layer.

10. The semiconductor device of claim 7 , wherein a thickness of the first intermediate insulating layer is less by about 10% to about 20% than a thickness of the second intermediate insulating layer.

11. The semiconductor device of claim 10 , wherein

the first oxide semiconductor pattern is disposed between the base substrate and the first intermediate insulating layer,

the second intermediate insulating layer is disposed on the first intermediate insulating layer, and

the first control electrode is disposed on the second intermediate insulating layer.

12. The semiconductor device of claim 11 , wherein

the plurality of insulating layers further comprises a lower insulating layer,

the lower insulating layer is disposed between the base substrate and the second oxide semiconductor pattern,

the second oxide semiconductor pattern is disposed between the lower insulating layer and the second intermediate insulating layer, and

the second control electrode is disposed on the second intermediate insulating layer.

13. The semiconductor device of claim 10 , wherein

the first control electrode is disposed between the base substrate and the first intermediate insulating layer, and

the first oxide semiconductor pattern is disposed on the first intermediate insulating layer.

14. The semiconductor device of claim 13 , wherein

the plurality of insulating layers further comprises an upper insulating layer, and

the upper insulating layer is disposed on the first oxide semiconductor pattern.

15. The semiconductor device of claim 13 , wherein

the second control electrode is disposed between the base substrate and the first intermediate insulating layer,

the second intermediate insulating layer is disposed on the first intermediate insulating layer, and

the second oxide semiconductor pattern is disposed on the second intermediate insulating layer.

16. A semiconductor device comprising:

a base substrate;

a first thin film transistor disposed on the base substrate, wherein the first thin film transistor comprises a first source, a first drain, a first gate, and a first channel of a first monolayer of a first oxide semiconductor pattern comprising a crystalline oxide semiconductor;

a second thin film transistor disposed on the base substrate, wherein the second thin film transistor comprises a second source, a second drain, a second gate, and a second channel of a second monolayer of a second oxide semiconductor pattern which comprises an oxide semiconductor having a crystal structure different from a crystal structure of the crystalline oxide semiconductor of the first oxide semiconductor pattern; and

a plurality of insulating layers disposed on the base substrate.