IP Library › Granted Patent US 10,763,316
Granted Patent B2
US 10,763,316 · App. 16/219,574 · Granted Sep 1, 2020

Organic light emitting diode display device

Inventors: Ji-Su Han (Paju-si, KR); Hye-Jeong Park (Paju-si, KR)
Assignee: LG DISPLAY CO., LTD.
H01L27/3232G02B5/3016G02B5/3083H01L27/3211H01L51/5206H01L51/5271H01L51/5281H01L27/3244H01L51/5256H01L2251/5369
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Quick Facts
Patent No.
US 10,763,316
App. No.
16/219,574
Granted
Sep 1, 2020
Kind
B2
Abstract

An organic light emitting diode display device includes a substrate including a red pixel region, a green pixel region, and a blue pixel region; a driving thin film transistor and a light emitting diode which are in each of the red pixel region, the green pixel region, and the blue pixel region; and a cholesteric liquid crystal (CLC) layer having an infrared radiation (IR) wavelength in a transmission direction of light emitted from the light emitting diode, wherein the IR wavelength is in a range of 800 nm to 1,100 nm, and the CLC layer has a reflection wavelength of 400 nm to 700 nm at a viewing angle of 40° to 60°.

Claims (25)

1. An organic light emitting diode display device, comprising:

a substrate including a red pixel region, a green pixel region, and a blue pixel region;

a driving thin film transistor, a first electrode, and a light emitting diode each of which are provided in each of the red pixel region, the green pixel region, and the blue pixel region;

a second electrode common to each of the red, green, and blue pixel regions; and

a cholesteric liquid crystal (CLC) layer having an infrared radiation (IR) wavelength in a transmission direction of light emitted from the light emitting diodes,

wherein the IR wavelength is in a range of approximately 800 nm to 1,100 nm, and the CLC layer has a reflection wavelength of approximately 400 nm to 700 nm at a viewing angle of approximately 40° to 60°,

wherein the light emitting diode in the red pixel region has a first thickness,

wherein the light emitting diode in the green pixel region has a second thickness,

wherein the light emitting diode in the blue pixel region has a third thickness,

wherein the first to third thicknesses are different from one another,

wherein each of the first to third thicknesses is a distance between the first electrode of the red, green, and blue pixel regions respectively and the second electrode of the light emitting diode in each of the red, green and blue pixel regions, and

wherein each first electrode is formed to have different thicknesses which differ for each of the red, green, and blue pixel regions.

2. The organic light emitting diode display device of claim 1 , wherein when the IR wavelength of the CLC layer is 800 nm, the CLC layer has a reflection wavelength of 400 nm at a viewing angle of 60°.

3. The organic light emitting diode display device of claim 1 , wherein when the IR wavelength of the CLC layer is 1,100 nm, the CLC layer has a reflection wavelength of 580 nm at a viewing angle of 60°.

4. The organic light emitting diode display device of claim 1 , wherein the CLC layer is between the light emitting diodes and a λ/4 phase retardation plate, and

wherein a linear polarizing plate is on the λ/4 phase retardation plate.

5. The organic light emitting diode display device of claim 4 , wherein the CLC layer includes liquid crystal molecules of a rod shape, and

wherein a color compensation layer is provided between the CLC layer and the λ/4 phase retardation plate.

6. The organic light emitting diode display device of claim 4 , wherein the CLC layer has a spiral structure in which an orientation direction of liquid crystal molecules of a discotic shape is changed along an axis.

7. The organic light emitting diode display device of claim 1 , wherein the driving thin film transistors include a semiconductor layer, a gate insulating layer on the semiconductor layer, a gate electrode on the gate insulating layer, a first interlayer insulating layer on the gate electrode, and a source electrode and a drain electrode on the first interlayer insulating layer, and

wherein the light emitting diodes are on a second interlayer insulating layer that is on the source electrode and the drain electrode, and includes the first electrode connected to the driving thin film transistor transistors, an organic light emitting layer on the first electrode, and the second electrode on the organic light emitting layer.

8. The organic light emitting diode display device of claim 1 , further comprising:

a protective film configured to cover the driving thin film transistors and the light emitting diodes.

9. The organic light emitting diode display device of claim 1 , wherein the CLC layer serves to recycle light in a range from a green wavelength region to a red wavelength region and outputs the recycled light in a lateral direction of the organic light emitting diode display device.

10. The organic light emitting diode display device of claim 1 , wherein the first electrode in the red pixel region has a fourth thickness, the first electrode in the green pixel region has a fifth thickness less than the fourth thickness, and the first electrode in the blue pixel region has a sixth thickness less than the fifth thickness.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2018
From: HAN, JI-SU; PARK, HYE-JEONG
To: LG DISPLAY CO., LTD.
Reel/Frame 047914/0313 →
Priority Claims (1)
KR 10-2017-0180403 · Dec 27, 2017 · national
Continuity (1)
Related Publication 20190198583A1 · Jun 27, 2019
Cited By (1)
US 12,550,554