Method for manufacturing a semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming a photo resist layer over a substrate with underlying structures;

exposing the photo resist layer to exposure radiation;

developing the exposed photo resist layer with a developing solution; and

forming a planarization layer over the developed photo resist layer, wherein:

the underlying structures include concave portions, and

one of the concave portions is filled by the developed photo resist layer and one of the concave portions does not include the developed photo resist layer.

2. The method of claim 1 , wherein the planarization layer is made of an organic material.

3. The method of claim 1 , wherein the planarization layer is made of a photo resist material different from a material of the photo resist layer.

4. The method of claim 1 , wherein the planarization layer has a different optical property than the photo resist layer.

5. The method of claim 1 , wherein the planarization layer is made of a material different from a material of the photo resist layer in at least one material selected from the group consisting of a polymer structure, an acid labile molecule, a photo acid generator (PAG) amount, a quencher amount, a chromophore, a cross linker, and a solvent.

6. The method of claim 1 , wherein the planarization layer is made of a same material as a material of the photo resist layer.

7. The method of claim 1 , wherein the planarization layer is made of a bottom anti-reflective coating material.

8. The method of claim 1 , wherein:

the substrate includes a first area and a second area,

a ratio of the concave portions of the first area is different from a ratio of the concave portions of the second area, and

a ratio of the concave portions filled by the developed photo resist layer in the first area with respect to all the concave portions in the first area is different from a ratio of the concave portions filled by the developed photo resist layer in the second area with respect to all the concave portions in the second area.

9. The method of claim 8 , wherein:

the ratio of the concave portions of the first area is smaller than the ratio of the concave portions of the second area, and

the ratio of the concave portions filled by the developed photo resist layer in the first area with respect to all the concave portions in the first area is smaller than the ratio of the concave portions filled by the developed photo resist layer in the second area with respect to all the concave portions in the second area.

10. The method of claim 1 , wherein a photo resist material of the photo resist layer fills all the concave portions before the exposure.

11. A method of manufacturing a semiconductor device, the method comprising:

forming a photo resist layer over a substrate having a target area with underlying structures;

exposing the photo resist layer to exposure radiation;

developing the exposed photo resist layer with a developing solution; and

forming a planarization layer over the developed photo resist layer, wherein:

the underlying structures include concave portions,

the developed photo resist layer in one concave portion is in direct contact with one end of the concave portion and a top of the developed photo resist layer in the one concave portion is located at a higher level than a top of the underlying structures and partially extends over the one end to a neighboring concave portion, and

a volume Ve of the developed photo resist layer in the target area is in a range of 0.9 Vi<Ve<1.1 Vi, where Vi is a volume of the concave portions in the target area before the photo resist layer is formed.

12. The method of claim 11 , wherein 0.95 Vi<Ve<1.05 Vi.

13. The method of claim 11 , wherein the developed photo resist layer includes line and space patterns.

14. The method of claim 11 , wherein the developed photo resist layer includes a checker board pattern.

15. The method of claim 11 , wherein:

the concave portions extend in a first direction, and

the developed photo resist layer includes patterns extending in the first direction.

16. The method of claim 11 , wherein:

the concave portions extend in a first direction, and

the developed photo resist layer includes patterns extending in a second direction crossing the first direction.

17. The method of claim 11 , wherein:

the substrate includes a high-flat area having no concave portion, and

no developed photo resist layer exists in the high-flat area.

18. The method of claim 11 , wherein:

the substrate includes a low-flat area having no protruding patterns and having a level equal to a bottom of the concave portions, and

all of the low-flat area is filled by the developed photo resist layer.

19. The method of claim 11 , wherein the planarization layer is made of a material including carbon and has a different optical property than the photo resist layer.

20. A method of manufacturing a semiconductor device, the method comprising:

forming underlying structures by a first patterning operation including a lithography operation using a photo mask and an etching operation;

forming a photo resist layer over the underlying structures;

forming first planarization patterns by a second patterning operation including a lithography operation using a second photo mask on the photo resist layer over the underlying structures; and

forming a second planarization layer over the first planarization patterns, wherein:

the second planarization layer is made of an organic material, and

an opaque area ratio of the second photo mask in an area of interest over a substrate varies with respect to an opaque area ratio of the photo mask in the area of interest.