Process kit erosion and service life prediction
Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber. The processor compares the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component. The processor determines whether the one or more power measurements exceed the threshold values. If the processor determines that the one or more power measurements exceed the threshold values, the processor takes remedial measures for the service life of the chamber component.
1. A method of monitoring a service life of a chamber component, comprising:
receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises:
receiving a first power measurement directed to a current of DC bias power from a first sensor;
receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and
receiving a third power measurement directed to a DC bias match position from a third sensor;
comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value;
determining whether the one or more power measurements exceed the one or more threshold values; and
responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component.
2. The method of claim 1 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times;
determining whether the second power measurement exceeds a second threshold value a second number of times; and
determining whether the third power measurement exceeds a third threshold value a third number of times.
3. The method of claim 1 , wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises:
receiving a first power measurement directed to a current of an RF source from a first sensor; and
receiving a second power measurement directed to a voltage of the RF source.
4. The method of claim 3 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times; and
determining whether the second power measurement exceeds a second threshold value a second number of times.
5. The method of claim 1 , wherein the semiconductor processing chamber further comprises a substrate support disposed within the semiconductor processing chamber, the substrate support comprising a ring assembly having a cover ring and an edge ring, wherein the chamber component being monitored is one of the cover ring or the edge ring.
6. The method of claim 1 , responsive to determining that a power measurement exceeds a threshold value, issuing a notice of a state of the chamber component, comprises:
stopping substrate processing.
7. A system, comprising:
a processor;
a semiconductor processing chamber having one or more sensors, each sensor in communication with the processor; and
a memory storing program code, which, when executed on the processor, performs an operation for monitoring a service life of a chamber component, the operation comprising:
receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises:
receiving a first power measurement directed to a current of DC bias power from a first sensor;
receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and
receiving a third power measurement directed to a DC bias match position from a third sensor;
comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value;
determining whether the one or more power measurements exceed the one or more threshold values; and
responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component.
8. The system of claim 7 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times;
determining whether the second power measurement exceeds a second threshold value a second number of times; and
determining whether the third power measurement exceeds a third threshold value a third number of times.
9. The system of claim 7 , wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises:
receiving a first power measurement directed to a current of an RF source from a first sensor; and
receiving a second power measurement directed to a voltage of the RF source.
10. The system of claim 9 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times; and
determining whether the second power measurement exceeds a second threshold value a second number of times.
11. The system of claim 7 , wherein the semiconductor processing chamber further comprises a substrate support disposed within the semiconductor processing chamber, the substrate support comprising a ring assembly having a cover ring and an edge ring, wherein the chamber component being monitored is one of the cover ring or the edge ring.
12. The system of claim 7 , wherein responsive to determining that a power measurement exceeds the threshold value, issuing a notice of a state of the chamber component, comprises:
stopping substrate processing.
13. A computer readable storage medium having stored thereon instructions that, when executed by a processor, cause the processor to perform a method of monitoring a service life of a chamber component, the method comprising:
receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, wherein receiving one or more power measurements comprises:
receiving a first power measurement directed to a current of DC bias power from a first sensor;
receiving a second power measurement directed to a voltage of DC bias power from a second sensor; and
receiving a third power measurement directed to a DC bias match position from a third sensor;
comparing the one or more power measurements to one or more threshold values corresponding to the service life of the chamber component, wherein each power measurements has a respective threshold value;
determining whether the one or more power measurements exceed the one or more threshold values; and
responsive to determining that the one or more power measurements exceed the threshold values, issuing a notice of a state of the chamber component.
14. The computer readable storage medium claim 13 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times;
determining whether the second power measurement exceeds a second threshold value a second number of times; and
determining whether the third power measurement exceeds a third threshold value a third number of times.
15. The computer readable storage medium of claim 13 , wherein receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber, each sensor monitoring a respective power measurement, comprises:
receiving a first power measurement directed to a current of an RF source from a first sensor; and
receiving a second power measurement directed to a voltage of the RF source.
16. The computer readable storage medium of claim 15 , wherein determining whether a power measurement exceeds the one or more threshold values, comprises:
determining whether the first power measurement exceeds a first threshold value a first number of times; and
determining whether the second power measurement exceeds a second threshold value a second number of times.
17. The computer readable storage medium of claim 13 , wherein responsive to determining that a power measurement exceeds a threshold value, issuing a notice of a state of the chamber component, comprises:
stopping substrate processing.