Semiconductor apparatus, method for manufacturing the same and electric power conversion device
A semiconductor apparatus includes: a substrate including a circuit pattern on an upper surface side and a metal plate on a lower surface side; a semiconductor device joined to the circuit pattern via a conductive component; a case located to surround the substrate; a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and a bonding agent bonding the case and the metal plate on a side face of the substrate.
1. A semiconductor apparatus comprising:
a substrate including an insulator disposed between a circuit pattern on an upper surface side and a metal plate on a lower surface side;
a semiconductor device joined to the circuit pattern via a conductive component;
a case located to surround the substrate, a gap being between the case and a lateral side face of the substrate;
a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and
a bonding agent bonding the case and the metal plate on the lateral side face of the substrate, the bonding agent extending along a bottom surface of the case and filling the gap between the case and the lateral side face of the substrate.
2. The semiconductor apparatus according to claim 1 , wherein a lower part of the case includes a protrusion that makes contact with an upper surface of the metal plate.
3. The semiconductor apparatus according to claim 1 , wherein a lower part of the case includes a step.
4. The semiconductor apparatus according to claim 2 , wherein a lower part of the case includes a step.
5. The semiconductor apparatus according to claim 1 , wherein the bonding agent covers a lower part of the case that is higher than the bottom surface of the case.
6. The semiconductor apparatus according to claim 2 , wherein the bonding agent covers the protrusion.
7. The semiconductor apparatus according to claim 3 , wherein the bonding agent covers the step.
8. The semiconductor apparatus according to claim 4 , wherein the bonding agent covers one or both of the protrusion and the step.
9. An electric power conversion device comprising:
a main conversion circuit including the semiconductor apparatus according to claim 1 , converting input power and outputting converted power; and
a control circuit outputting a control signal for controlling the main conversion circuit to the main conversion circuit.
10. The semiconductor apparatus of claim 1 , wherein the bonding agent includes a thermoplastic resin.
11. A semiconductor apparatus comprising:
a substrate including an insulator disposed between a circuit pattern on an upper surface side and a metal plate on a lower surface side;
a semiconductor device joined to the circuit pattern via a conductive component;
a case located to surround the substrate;
a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and
a bonding agent bonding the case and the metal plate on a lateral side face of the substrate, the bonding agent covering a bottom surface of the case.
12. The semiconductor apparatus according to claim 11 , wherein a bottom surface of the bonding agent is coplanar with a bottom surface of the metal plate.
13. A semiconductor apparatus comprising:
a substrate including an insulator disposed between a circuit pattern on an upper surface side and a metal plate on a lower surface side;
a semiconductor device joined to the circuit pattern via a conductive component;
a case located to surround the substrate;
a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and
a bonding agent covering a lower inner part, a lower outer part, and a lower surface of the case, bonding the lower inner part of the case and a lateral side face of the metal plate on a lateral side face of the substrate.