Magnetic storage device radiating heat from selector

1. A magnetic storage device comprising:

a first memory cell including a magnetoresistive effect element, a selector, and a first barrier material disposed between the selector and the magnetoresistive effect element,

wherein the first barrier material has a thermal conductivity between 1 W/mK and 5 W/mK, inclusive,

wherein the first memory cell further includes a second barrier material disposed so that the selector is placed between the first barrier material and the second barrier material, and

wherein the second barrier material has a thermal conductivity higher than the thermal conductivity of the first barrier material.

2. The device of claim 1 , wherein the first barrier material includes carbon (C), carbon nitride (CN), or carbon boride (CB).

3. The device of claim 1 , wherein the thermal conductivity of the second barrier material is 10 W/mK or higher.

4. The device of claim 1 , wherein the second barrier material includes tungsten (W), tungsten nitride (WN), or titanium nitride (TiN).

5. The device of claim 1 , wherein the selector, the first barrier material, and the magnetoresistive effect element are stacked above a semiconductor substrate,

wherein the first memory cell further includes an insulator disposed on a side surface of the selector, and

wherein the insulator has a thermal conductivity greater than the thermal conductivity of the first barrier material.

6. The device of claim 5 , wherein the thermal conductivity of the insulator is higher than 5 W/mK.

7. The device of claim 5 , wherein the insulator includes silicon nitride (SiN).

8. The device of claim 1 , wherein the selector includes a two-terminal switching element.

9. The device of claim 8 , wherein the selector includes a chalcogenide.

10. The device of claim 9 , wherein the selector further includes at least one of tellurium (Te), boron (B), aluminum (Al), gallium (Ga), indium (In), carbon (C), silicon (Si), germanium (Ge), tin (Sn), arsenic (As), phosphorus (P), and antimony (Sb).

11. The device of claim 1 , wherein the first memory cell further includes a first nonmagnetic material disposed between the first barrier material and the magnetoresistive effect element, and

wherein the first nonmagnetic material has a thermal conductivity of 10 W/mK or higher.

12. The device of claim 1 , further comprising a second memory cell including the magnetoresistive effect element, the selector, and the first barrier material,

wherein the first memory cell is configured to be capable of electrically connecting a first conductor and a second conductor,

wherein the second memory cell is configured to be capable of electrically connecting the second conductor and a third conductor, and

wherein the second memory cell is disposed above the first memory cell.

13. The device of claim 12 , further comprising a controller configured to control write of data to the first memory cell,

wherein the controller is configured to apply, at a time of the write of the data to the first memory cell, a first voltage to the first conductor, a second voltage different from the first voltage to the second conductor, and a third voltage between the first voltage and the second voltage to the third conductor.

14. The device of claim 13 , wherein a difference between the first voltage and the second voltage is greater than a threshold voltage of the selector, and

wherein a difference between the second voltage and the third voltage is less than the threshold voltage of the selector.

15. The device of claim 1 , wherein the magnetoresistive effect element includes a first ferromagnetic material, a second ferromagnetic material, and a second nonmagnetic material disposed between the first ferromagnetic material and the second ferromagnetic material.

16. The device of claim 15 , wherein the magnetoresistive effect element is disposed below the selector.

17. The device of claim 15 , wherein the magnetoresistive effect element is disposed above the selector.