Inverted organic photosensitive devices
The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.
1. A method for producing an inverted, organic photovoltaic device, said method comprising:
providing a metal reflective electrode;
performing at least an ultra-violet ozone (UV-O 3 ) surface treatment on said metal reflective electrode;
forming an organic donor-acceptor heterojunction over said metal reflective electrode;
and forming a transparent electrode over said organic donor-acceptor heterojunction.
2. The method of claim 1 , wherein the reflective electrode is positioned over a substrate.
3. The method of claim 1 , wherein the donor of the organic donor-acceptor heterojunction comprises a material selected from phthalocyanines, porphyrins, subphthalocyanines, and derivatives or transition metal complexes thereof.
4. The method of claim 1 , wherein the donor of the donor-acceptor heterojunction comprises copper phthalocyanine.
5. The method of claim 1 , wherein the acceptor of the organic donor-acceptor heterojunction comprises a material selected from polymeric or non-polymeric perylenes, naphthalenes, and fullerenes.
6. The method of claim 1 , wherein the acceptor of the organic donor-acceptor heterojunction comprises 3,4,9,10-perylenetetracarboxylic bis-benzimidazole.
7. The method of claim 1 , wherein the transparent electrode comprises a material selected from transparent oxides and metal or metal substitutes.
8. The photosensitive device of claim 1 , wherein the transparent electrode permits at least about 50% of ambient electromagnetic radiation to be transmitted through said electrode.
9. The method of claim 1 , wherein the transparent electrode comprises a material selected from tin oxide, gallium indium tin oxide, and zinc indium tin oxide.
10. The method of claim 1 , further comprising the step of providing an exciton blocking layer.
11. The method of claim 10 , wherein the exciton blocking layer is positioned between the reflective electrode and the transparent electrode.
12. The method of claim 10 , wherein the exciton blocking layer is positioned between the acceptor of the organic donor-acceptor heterojunction and the transparent electrode.
13. The method of claim 10 , wherein the exciton blocking layer comprises a material selected from N,N′-diphenyl-N,N′-bis-alpha-naphthylbenzidine, aluminum tris (8-hydroxyquinoline), carbazole biphenyl, bathocuproine, and tris(acetylacetonato) ruthenium (III).
14. The method of claim 1 , wherein the organic donor-acceptor heterojunction comprises a structure selected from planar heterojunctions, bulk heterojunctions, nanocrystalline bulk heterojunctions, hybrid planar-mixed heterojunctions, and mixed heterojunctions.
15. The method of claim 1 , further comprising performing a plasma treatment before performing the UV-O 3 surface treatment on the reflective electrode.
16. The method of claim 15 , wherein the plasma surface treatment is selected from oxygen plasma treatment and argon plasma treatment.
17. The method of claim 1 , wherein the metal reflective electrode is a metal anode.
18. The method of claim 1 , wherein the metal reflective electrode comprises a metal chosen from nickel, silver, aluminum, magnesium, indium, and mixtures or alloys thereof.