IP Library › Granted Patent US 10,771,719
Granted Patent B2
US 10,771,719 · App. 16/318,650 · Granted Sep 8, 2020

Imaging element

Inventors: Toshiyuki Nishihara (Kanagawa, JP); Tomohiro Takahashi (Tokyo, JP); Masao Matsumura (Kanagawa, JP); Tsutomu Imoto (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H04N5/3575H01L27/146H01L27/14634H04N5/357H04N5/369H04N5/374H04N5/378H04N5/379H04N5/3745H04N5/37452
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Quick Facts
Patent No.
US 10,771,719
App. No.
16/318,650
Granted
Sep 8, 2020
Kind
B2
Abstract

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Claims (35)

1. An imaging element, comprising:

a photoelectric conversion element;

a first amplification element that amplifies a signal from the photoelectric conversion element;

a second amplification element that amplifies an output from the first amplification element;

an offset element provided between the first amplification element and the second amplification element;

a first reset element that resets the first amplification element;

a second reset element that resets the second amplification element;

a differential amplifier, wherein an output signal from the second amplification element and a reference signal are input to the differential amplifier, and wherein an output from the differential amplifier is supplied to the second reset element.

2. The imaging element according to claim 1 , wherein

the offset element is a capacitor.

3. The imaging element according to claim 1 , wherein

a charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated.

4. The imaging element according to claim 1 , wherein the differential amplifier includes the second reset element and a current mirror circuit.

5. The imaging element according to claim 1 , wherein

an input parasitic capacitance of the second amplification element is larger than an input parasitic capacitance of the first amplification element.

6. The imaging element according to claim 1 , wherein

after the first amplification element is reset by the first reset element, the second amplification element is reset by the second reset element.

7. The imaging element according to claim 1 , wherein

charge transfer and resetting of the photoelectric conversion element are performed in the same period.

8. The imaging element according to claim 1 ,

further comprising a detection unit that detects a signal from the second amplification element,

wherein the detection unit performs sampling of each of a reset signal and an accumulated signal, including processing of correlated double sampling.

9. The imaging element according to claim 8 , wherein

the detection unit considers a predetermined row as a processing target and performs sampling of a reset signal from the predetermined row, and

performs sampling of accumulated signals from all the rows including the predetermined row.

10. The imaging element according to claim 1 ,

further comprising a detection unit that detects a signal from the second amplification element,

wherein the detection unit does not perform sampling of a reset signal and only performs sampling of an accumulated signal, including processing of correlated double sampling.

11. The imaging element according to claim 1 , wherein

the photoelectric conversion element, the first amplification element, and the first reset element are formed in a first layer,

the offset element, the second amplification element, and the second reset element are formed in a second layer, and

the first layer and the second layer are stacked.

12. The imaging element according to claim 11 , wherein

the detection unit that detects the signal from the second amplification element is formed in a third layer, and

the first layer, the second layer, and the third layer are stacked.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2019
From: NISHIHARA, TOSHIYUKI; TAKAHASHI, TOMOHIRO; MATSUMURA, MASAO; IMOTO, TSUTOMU
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 048075/0432 →
Priority Claims (1)
JP 2016-147994 · Jul 28, 2016 · national
Continuity (1)
Related Publication 20190222783A1 · Jul 18, 2019
Cited By (1)
US 12,348,883