IP Library › Granted Patent US 10,777,265
Granted Patent B2
US 10,777,265 · App. 15/810,993 · Granted Sep 15, 2020

Enhanced FDSOI physically unclonable function

Inventor: Kangguo Cheng (Schenectady, NY)
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
G11C11/5642G11C7/1006G11C7/24G11C11/419G11C16/26H04L9/3278H01L27/11519H01L27/11526H04L2209/12
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Quick Facts
Patent No.
US 10,777,265
App. No.
15/810,993
Granted
Sep 15, 2020
Kind
B2
Abstract

An integrated circuit includes transistor devices, each having a back gate. A controller is connected to the back gate to apply voltages to the back gate, wherein a first mode includes a first voltage for operational threshold voltages for the transistor devices, and a second mode includes a second voltage that enhances threshold voltage variability of the plurality of transistor devices to provide a physically unclonable function (PUF) for chip identification.

Claims (24)

1. An integrated circuit, comprising:

a plurality of transistor devices each having a back gate that includes a region formed distinct from a body of each of the plurality of transistor devices; and

a controller connected to the back gate to apply voltages to the back gate, wherein the controller includes a first mode that includes a first voltage for operational threshold voltages for the plurality of transistor devices and a second mode that includes a second voltage that enhances threshold voltage variability of the plurality of transistor devices to provide a physically unclonable function (PUF) for chip identification.

2. The circuit as recited in claim 1 , wherein the plurality of transistor devices includes field effect transistors having the back gate formed in a well of a semiconductor substrate.

3. The circuit as recited in claim 2 , wherein the semiconductor substrate includes a fully depleted semiconductor-on-insulator substrate.

4. The circuit as recited in claim 1 , wherein the circuit includes at least one ring oscillator.

5. The circuit as recited in claim 1 , wherein the plurality of transistor devices includes n-type field effect transistors (NFETs) and the second voltage includes a positive back gate bias.

6. The circuit as recited in claim 1 , wherein the plurality of transistor devices includes p-type field effect transistors (PFETs) and the second voltage includes a negative back gate bias.

7. The circuit as recited in claim 1 , wherein the PUF for chip authentication includes a threshold voltage variability pattern of the plurality of transistor devices.

8. The circuit as recited in claim 7 , wherein the PUF is employed by a computer system to authenticate an identity of the integrated circuit.

9. The circuit as recited in claim 1 , wherein the back gate is electrically isolated from a body of each of the plurality of transistor devices.

10. An integrated circuit, comprising:

a fully depleted semiconductor-on-insulator substrate (FDSOI) having a back gate of field effect transistors that includes a region formed distinct from a body of each of the field effect transistors formed below a buried dielectric layer of the FDSOI substrate, the FDSOI substrate including a semiconductor layer forming source regions, channel regions and drain regions;

a front gate structure formed on the semiconductor layer to form the field effect transistors; and

a controller connected to the back gate to apply voltages to the back gate of the field effect transistors, wherein the controller includes a first mode that includes a first voltage for operational threshold voltages for the field effect transistors and a second mode that includes a second voltage that enhances threshold voltage variability of the field effect transistors to provide a physically unclonable function (PUF) for chip identification.

11. The circuit as recited in claim 10 , wherein the field effect transistors include the back gate formed in a well of a base semiconductor substrate.

12. The circuit as recited in claim 10 , wherein the circuit includes at least one ring oscillator.

13. The circuit as recited in claim 12 , wherein the circuit includes:

at least two multiplexers configured to receive input from the at least one ring oscillator and to receive a challenge; and

a response component to determine a response to the challenge for authentication of a chip including the circuit.

14. The circuit as recited in claim 10 , wherein the field effect transistors include n-type field effect transistors (NFETs) and the second voltage includes a positive back gate bias.

15. The circuit as recited in claim 10 , wherein the field effect transistors include p-type field effect transistors (PFETs) and the second voltage includes a negative back gate bias.

16. The circuit as recited in claim 10 , wherein the PUF for chip authentication includes a threshold voltage variability pattern of the field effect transistors.

17. The circuit as recited in claim 16 , wherein the PUF is employed by a computer system to authenticate an identity of the integrated circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2017
From: CHENG, KANGGUO
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 044110/0643 →
Continuity (1)
Related Publication 20190147948A1 · May 16, 2019