Amorphous metal thin film nonlinear resistor
Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.
1. A system, comprising:
a first glass layer;
a first and a second amorphous metal thin film device on the first glass layer;
a first electrode on the first glass layer, the first electrode being coupled between the first and second amorphous metal thin film devices;
a second electrode; and
a second glass layer, the second electrode being on the second glass layer.
2. The system of claim 1 , further comprising a liquid crystal layer positioned between the first electrode and the second electrode.
3. The system of claim 1 wherein the first and second amorphous metal thin film devices each include:
a first amorphous metal thin film interconnect;
a second amorphous metal thin film interconnect; and
a third amorphous metal thin film interconnect.
4. The system of claim 3 wherein the first, second, and third amorphous metal thin film interconnects are formed on the first glass layer and a tunneling oxide is formed on the first, second, and third amorphous metal thin film interconnects.
5. The system of claim 3 wherein the first and second amorphous metal thin film devices each include:
a signal line that overlaps the first amorphous metal thin film interconnect;
a first conductive interconnect that overlaps the first amorphous metal thin film interconnect and overlaps the second amorphous metal thin film interconnect; and
a second conductive interconnect that overlaps the second amorphous metal thin film interconnect and the third amorphous metal thin film interconnect, the first electrode also overlaps the third amorphous metal thin film interconnect.
6. The system of claim 5 wherein each of the first and second conductive interconnects is an amorphous metal thin film.
7. The system of claim 5 wherein the signal line of the first amorphous metal thin film device and the signal line of the second amorphous metal thin film device are separated from the first and second electrodes by the first and second amorphous metal thin film devices.
8. The system of claim 5 wherein the signal line of the first amorphous metal thin film device and the signal line of the second amorphous metal thin film device are separated from each other by the first and second amorphous metal thin film devices and the first and second electrodes.
9. The system of claim 3 wherein each of the third amorphous metal thin film interconnect in the first amorphous metal thin film device and the third amorphous metal thin film interconnect in the first amorphous metal thin film device is a leg of a U-shaped amorphous metal thin film interconnect, the first electrode coupled to a portion of the U-shaped amorphous metal thin film interconnect connecting legs of the U-shaped amorphous metal thin film interconnect by a conductive via.
10. A device, comprising:
a substrate;
a first amorphous metal thin film device having at least one active area;
a second amorphous metal thin film device having at least one active area;
a first electrode formed on the substrate and coupled to the first and second amorphous metal thin film devices; and
a second electrode aligned with the first electrode.
11. The device of claim 10 wherein the second electrode and the first electrode are on the substrate, positioned above the first and second amorphous metal thin film devices.
12. The device of claim 10 , further comprising a glass layer on the first and second electrodes, wherein the second electrode is on the glass layer.
13. The device of claim 10 wherein each of the first and second amorphous metal thin film devices includes a first, second, and third amorphous metal thin film interconnect.
14. The device of claim 13 wherein each of the first and second amorphous metal thin film devices includes a first, second, third, and fourth conductive interconnect.
15. The device of claim 14 wherein the first conductive interconnect overlaps the first amorphous metal thin film interconnect, the second conductive interconnect overlaps the first and second amorphous metal thin film interconnects, the third conductive interconnect overlaps the second and third amorphous metal thin film interconnects, and the fourth conductive interconnect overlaps the third amorphous metal thin film interconnect.
16. The device of claim 15 wherein the first electrode is coupled to the fourth conductive interconnect of each of the first and second amorphous metal thin film devices through a conductive via.
17. The device of claim 10 wherein the first and second electrodes include comb fingers that extend towards each other to capacitively interact.
18. A device, comprising:
a substrate;
a first and second amorphous metal thin film device on the substrate, each of the first and second amorphous metal thin film device including:
a plurality of amorphous metal thin film interconnects on the substrate;
a first insulator on the plurality of amorphous metal thin film interconnects; and
a plurality of conductive interconnects on the first insulator, the plurality of conductive interconnects overlapping the plurality of amorphous metal thin film interconnects to define a plurality of active areas;
a second insulator on the plurality of conductive interconnects;
a first switching electrode on the second insulator and coupled to the first and second amorphous metal thin film devices;
a second switching electrode on the second insulator and aligned with the first switch electrode; and
a storage capacitor on the substrate coupled to the first switching electrode, the storage capacitor including:
a lower electrode on the substrate; and
an upper electrode over the second insulator and aligned with the lower electrode.
19. The device of claim 18 wherein the lower electrode is coupled to the first switching electrode by a conductive via through the first and second insulators.
20. The device of claim 18 wherein the first switching electrode is coupled to each of the first and second amorphous metal thin film devices by a conductive via through the second insulator.