Semiconductor device and method of manufacturing the same
According to one embodiment, a semiconductor device includes a substrate, an interconnect layer, a layer stack, and a first silicon nitride layer. The interconnect layer includes a transistor provided on the substrate and a first interconnect electrically coupled to the transistor and is provided above the transistor. The layer stack is provided above the interconnect layer and includes conductive layers stacked with an insulation layer interposed between two of conductive layers of each pair of conductive layers. The first silicon nitride layer is provided between the interconnect layer and the layer stack.
1. A semiconductor device comprising:
a substrate;
a transistor provided on the substrate;
a first interconnect layer provided above the transistor and electrically coupled to the transistor;
a first conductive layer provided above the first interconnect layer;
a layer stack provided above the first interconnect layer, the layer stack comprising a plurality of second conductive layers separated from each other;
a pillar extending through the layer stack in a first direction and including a semiconductor layer, the first direction being a stacking direction of the second conductive layers, the semiconductor layer electrically coupled to the first conductive layer; and
a first silicon nitride layer provided between the first interconnect layer and the first conductive layer, the first conductive layer contacting an end of the pillar.
2. The semiconductor device according to claim 1 , further comprising a first contact that extends in the layer stack and in the first silicon nitride layer in the first direction and is electrically coupled to the first interconnect layer.
3. The semiconductor device according to claim 2 , wherein the first contact comprises:
a first metal layer continuously extending in the layer stack and in the first silicon nitride layer in the first direction; and
a first silicon oxide layer provided between the first metal layer and the layer stack.
4. The semiconductor device according to claim 3 , further comprising:
a second silicon oxide layer, wherein the first silicon nitride layer is located on the second silicon oxide layer and on the first interconnect layer.
5. The semiconductor device according to claim 4 , wherein a lower end of the first silicon oxide layer is located on the first silicon nitride layer.
6. The semiconductor device according to claim 5 , further comprising a third silicon oxide layer provided between the first silicon nitride layer and the layer stack and between the first interconnect layer and the layer stack.
7. The semiconductor device according to claim 6 , wherein the first silicon oxide layer is in contact with the layer stack.
8. The semiconductor device according to claim 7 , wherein the third silicon oxide layer is in contact with the layer stack.
9. The semiconductor device according to claim 8 , wherein the first silicon oxide layer is in contact with the third silicon oxide layer.
10. The semiconductor device according to claim 9 , further comprising:
a semiconductor layer provided above the third silicon oxide layer, wherein the layer stack is provided on the semiconductor layer.
11. The semiconductor device according to claim 2 , wherein the first interconnect layer comprises:
a second metal layer; and
a first silicon layer provided between the second metal layer and the first contact.
12. The semiconductor device according to claim 2 , wherein the first contact comprises:
a first metal layer continuously extending in the layer stack in the first direction;
a second silicon layer that continuously extends in the first silicon nitride layer in the first direction and is connected to the first metal layer; and
a first silicon oxide layer provided between the first metal layer and the layer stack.
13. A method of manufacturing a semiconductor device, the method comprising:
forming a transistor on a substrate; and
forming a first interconnect layer above the transistor, the first interconnect layer being electrically coupled to the transistor;
forming a first silicon nitride layer above the first interconnect layer;
forming a first conductive layer above the first silicon nitride layer;
forming a layer stack above the first conductive layer, the layer stack comprising a plurality of second conductive layers separated from each other;
forming a pillar extending through the layer stack in a first direction and including a semiconductor layer, the first direction being a stacking direction of the second conductive layers, the semiconductor layer electrically coupled to the first conductive layer; and
forming a first silicon nitride layer between the first interconnect layer and the first conductive layer, the first conductive layer contacting an end of the pillar.
14. The method according to claim 13 , wherein the first silicon nitride layer is formed by an LP-CVD method.
15. The device according to claim 1 , wherein the first silicon nitride layer extends in a second direction that intersects with the first direction.