Asymmetrical blocking bidirectional gallium nitride switch
A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The HEMT GaN bidirectional blocking device further includes a first source/drain electrode and a second source/drain electrode disposed on two opposite sides of a gate electrode disposed on top of said hetero-junction structure for controlling a current flow between the first and second source/drain electrodes in the 2DEG layer wherein the gate electrode is disposed at a first distance from the first source/drain electrode and a second distance from the second source/drain electrode and the first distance is different from the second distance.
1. A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising:
a hetero junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer;
a first source/drain electrode and a second source/drain electrode disposed on two opposite edges as two vertical blocks extending upwardly to about a same height from a top surface of the hetero junction structure;
the first source/drain electrode further includes a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode with a first gate disposed on the top surface of the hetero junction structure underneath the first field plate; and
the second source/drain electrode further includes a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode with a second gate disposed on the top surface of the hetero junction structure underneath the second field plate wherein the first field plate and the second field plate are extended along substantially a same vertical level but have two different sizes.
2. The HEMT GaN bidirectional blocking device of claim 1 wherein:
the first field plate has a length represented by L SD-FP1 and the second field plate has a length represented by L SD-FP2 and wherein L SD-FP1 is different from L SD-FP2 .
3. The HEMT GaN bidirectional blocking device of claim 1 further comprising:
a sapphire substrate for supporting the hetero junction structure thereon.
4. The HEMT GaN bidirectional blocking device of claim 1 wherein:
the hetero junction structure comprises a gallium nitride (GaN) as the first semiconductor layer interfacing an AlGaN layer as the second semiconductor layer.
5. The HEMT semiconductor power device of claim 1 wherein:
the first semiconductor layer is an N-type gallium nitride layer and the second semiconductor layer is an N-type AlGaN layer dispo ed on top of the gallium nitride layer.
6. The HEMT GaN bidirectional blocking device of claim 1 further comprising:
a GaN buffer layer disposed on top of a bottom substrate for supporting the hetero junction structure thereon.
7. The HEMT GaN bidirectional blocking device of claim 1 wherein:
the first gate and the second gate comprise a first P-type AlGaN gate and a second P-type AlGaN gate.
8. The HEMT GaN bidirectional blocking device of claim 1 wherein:
the first source/drain electrode and the second source, drain electrode are composed of a metal selected from a group of metals consists of Ti, Al, Ni and Au.
9. A method of forming a high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device comprising:
forming a hetero junction structure from a first semiconductor layer interfacing a second semiconductor layer having different band gaps to make a two dimensional gas (2DEG) at the hetero junction structure;
forming a first source/drain electrode and second source/drain electrode as two vertical blocks extending upwardly to about a same height from a top surface and at two opposite ends of the hetero junction structure;
forming a first field plate extending horizontally from a top portion of the first source/drain electrode toward the second source/drain electrode and forming a first gate underneath the first field plate on the top surface of the hetero junction structure;
forming a second field plate extending horizontally from a top portion of the second source/drain electrode toward the first source/drain electrode and forming a second gate underneath the second field plate; and
the steps of forming the first field plate and the second field plate further include steps forming form the first and second field plates to extend along substantially a same vertical level but have two different sizes.
10. The method of claim 9 wherein:
the process of forming the first gate and the second gate further comprising a step of forming the first gate and the second gate as P-type AlGaN gates.
11. The method of claim 9 further comprising:
forming a sapphire substrate for supporting the hetero junction structure thereon.
12. The method of claim 9 wherein:
the process of forming the first and the second source/drain electrodes further comprise a step of forming the first source/drain electrode and the second source/drain electrode with a metal selected from a group of metals consists of Ti, Al, Ni and Au.