Method of forming a structure on a substrate
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.
1. A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
introducing a silicon halide precursor selected from the group consisting of SiI 4 , HSiI 3 , H 2 SiI 2 , H 3 SiI, Si2I 6 , H 2 Si2I 4 , H 3 Si 2 I 3 , H 4 Si 2 I 2 , H 5 Si 2 I, Si 3 I 8 , and one or more cyclic compounds in the reactor;
introducing a reactant gas comprising oxygen in the reactor; and,
providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor to form a layer comprising silicon dioxide.
2. The method according to claim 1 , wherein the reactant gas comprises substantially no nitrogen.
3. The method according to claim 1 , wherein the reactant gas comprises less than 5000 ppm nitrogen.
4. The method according to claim 1 , wherein the method comprises a PECVD process.
5. The method according to claim 1 , wherein the reactant gas comprises argon.
6. The method according to claim 1 , wherein a temperature within a reaction chamber of the reactor is between 25° C. and 700° C.
7. The method according to claim 1 , wherein the plasma is remotely generated.
8. The method according to claim 1 , wherein one of the silicon halide precursor and the reactant gas is pulsed to the reactor.
9. The method according to claim 8 , wherein one of the silicon halide precursor and the reactant gas is continuously flowed to the reactor during the method.
10. The method according to claim 1 , wherein one of the silicon halide precursor and the reactant gas is continuously flowed to the reactor during the method.
11. The method according to claim 1 , wherein the silicon halide precursor is continuously flowed to the reactor during the method.
12. The method according to claim 1 , wherein a pressure within the reactor is between about 0.08 Torr and about 40 Torr.
13. The method according to claim 1 , further comprising a plasma treatment step.
14. The method according to claim 13 , wherein the plasma treatment step comprises an argon plasma treatment.
15. The method according to claim 1 , further comprising a hydrogen plasma treatment.
16. A structure formed according to the method of claim 1 .