Method of forming a structure on a substrate
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.
1. A method of providing a structure by depositing a layer on a substrate in a reactor, the method comprising:
introducing a silicon halide precursor, comprising iodine or bromine, and a carrier gas in the reactor;
purging the reactor by stopping the flow of the silicon halide precursor, while continuing to flow the carrier gas for a sufficient time to diffuse or purge excess silicon halide precursor and silicon halide precursor byproducts, if any, from the reaction space and then;
introducing a reactant gas comprising oxygen in the reactor; and,
providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the silicon halide precursor comprising iodine or bromine into the layer comprising silicon dioxide.
2. The method according to claim 1 , wherein the silicon halide precursor is selected from the group consisting of one or more of SiI 4 , HSiI 3 , H 2 SiI 2 , H 3 SiI, Si 2 I 6 , H 2 Si 2 I 4 , H 3 Si 2 I 3 , H 4 Si 2 I 2 , H 5 Si 2 I, or Si 3 I 8 and one or more cyclic compounds.
3. The method according to claim 1 , wherein the reactant gas comprises substantially no nitrogen.
4. The method according to claim 3 , wherein substantially no nitrogen is less than 5000 ppm nitrogen.
5. The method according to claim 1 , wherein the carrier gas comprises argon.
6. The method according to claim 1 , wherein the reactant gas comprises argon.
7. The method according to claim 1 , wherein a temperature within a reaction chamber of the reactor is between 25 to 700° C.
8. The method according to claim 1 , wherein introducing a silicon halide precursor in the reactor comprises adsorbing the silicon halide precursor to a surface of the substrate.
9. The method according to claim 1 , wherein the method is a plasma enhanced atomic layer deposition method and the deposition method further comprises removing excess silicon halide precursor and reaction byproducts from the reactor after providing an energy source to create a plasma from the reactant gas.
10. The method according to claim 1 , wherein the deposition method also comprises after the plasma is created contacting an adsorbed silicon halide precursor with reactant species of the plasma.
11. The method according to claim 1 , wherein the method comprises providing an energy source to create a plasma two or more times in sequential pulses, without introducing the silicon halide precursor in between the sequential pulses.
12. The method of claim 1 , wherein the silicon oxide layer is deposited during formation of a semiconductor device.
13. The method according to claim 1 , wherein the silicon halide precursor has a general formula:
(1) H 2n+2-y- zSi n XyAz, wherein, n=1-10, y=1 or more and up to 2n+2−z, z=0 or more and up to 2n+2−y, X is I or Br, and A is a halogen other than X; or
(2) H 2+2-y-z Si n X y A z , wherein the formula (2) compound is cyclic compound, n=3-10, y=1 or more and up to 2n−z, z=0 or more and up to 2n−y, X is I or Br, and A is a halogen other than X;
and wherein the silicon halide comprises at least one hydrogen.
14. The method according to claim 1 , wherein a pressure within a reaction chamber of the reactor is between 0.08 to 40 Torr.
15. The method according to claim 1 , wherein the plasma is created with an energy source having a power between 50 and 1500 Watt.
16. The method according to claim 1 , wherein the oxygen in the reactant gas is provided with a flow of 0.1 to 10 slm.
17. The method according to claim 1 , wherein the carrier gas is provided with a flow of 0.5 to 8 slm.
18. The method according to claim 1 , wherein argon in the reactant gas is provided with a flow of 0.1 to 10 slm in the reactor.
19. The method according to claim 1 , comprising applying additional argon plasma treatment.
20. The method according to claim 1 , comprising applying additional hydrogen plasma treatment.
21. The method according to claim 1 , comprising multiple hydrogen and argon plasma treatment.
22. A method of providing a structure by depositing a layer on a substrate, the method comprising:
providing a silicon halide precursor, comprising iodine or bromine, and a carrier gas in the reactor;
purging the reactor by stopping the flow of the silicon halide precursor, while continuing to flow the carrier gas for a sufficient time to diffuse or purge excess silicon halide precursor and silicon halide precursor by products, if any, from the reaction space and then;
providing a reactant gas comprising oxygen in the reactor; and,
providing an energy source to create a plasma from the reactant gas so that the reactant gas reacts with the silicon halide precursor comprising iodine or bromine until the layer comprising silicon dioxide is formed.