Granted Patent B2

US 12,266,524 · App. 17/345,458 · Granted Apr 1, 2025

Inventors: Lucas Petersen Barbosa Lima (Heverlee, BE); Rami Khazaka (Leuven, BE); Qi Xie (Wilsele, BE)

Assignee: ASM IP Holding B.V.

H01L21/02579C30B25/04C30B25/165C30B25/18C30B29/52C30B33/12H01L21/02532H01L21/0262H01L29/167

Abstract

Claims (21)

1. A method for epitaxially growing a boron doped silicon germanium layer comprising:

providing a substrate comprising a monocrystalline surface in a reactor chamber;

performing a deposition cycle, wherein a unit of the deposition cycle consists essentially of:

introducing a gas consisting essentially of a silicon precursor, a germanium precursor, a boron precursor, and a carrier gas into the reactor chamber, thereby epitaxially growing a boron doped silicon germanium layer on the monocrystalline surface,

a purge step after the step of introducing a gas consisting essentially of a silicon precursor, a germanium precursor, a boron precursor, and a carrier gas into the reactor chamber; and

repeating the deposition cycle a plurality of times until a desired thickness of a boron doped silicon germanium layer is achieved,

wherein the silicon precursor comprises disilane,

wherein the germanium precursor comprises germane,

wherein the boron precursor comprises diborane, and

wherein the substrate is maintained at a temperature in the range of 200° C. to 450° C., as measured by means of a pyrometer.

2. The method according to claim 1 , further comprising performing a pre-clean step prior to the step of performing a deposition cycle, wherein the pre-clean step comprises exposing the surface to NH 4 OH, H 2 O 2 , and H 2 O.

3. The method according to claim 1 , wherein the substrate is maintained at a temperature to at most 350° C., as measured by means of a pyrometer.

4. The method according to claim 1 wherein the reactor chamber is maintained at a pressure of at least 10 Torr to at most 160 Torr.

5. The method according to claim 1 wherein the carrier gas is provided to the reactor chamber at a flow rate of at least 2 slm to at most 30 slm.

6. The method according to claim 1 wherein the silicon precursor is provided to the reactor chamber at a flow rate of at least 15 to at most 45 sccm, wherein the germanium precursor is provided to the reactor chamber at a flow rate of at least 350 to at most 2000 sccm, and wherein the boron precursor is provided to the reactor chamber at a flow rate of at least 0.5 sccm to at most 60 sccm.

7. The method according to claim 1 , wherein the substrate is maintained at a temperature of at least 150° C. to at most 400° C., as measured by means of a thermocouple in a susceptor.

8. The method according to claim 1 , further comprising a purge step, wherein the purge step comprises introducing one or more of N 2 or a noble gas, and wherein introducing one or more of N 2 or a noble gas is not concurrent with introducing a gas consisting essentially of a silicon precursor, a germanium precursor, a boron precursor, and a carrier gas into the reactor chamber.

9. The method according to claim 1 further comprising introducing a gallium precursor into the reactor chamber, thereby epitaxially growing a boron and gallium doped silicon germanium layer on the monocrystalline surface, wherein the gallium precursor comprises a compound selected from the list consisting of trimethylgallium, triethylgallium, tritertiarybutylgallium, Ga(BH 3 ), GaH 3 , and diethylgallium chloride.

10. The method according to claim 1 , wherein the substrate comprises a first surface and a second surface, wherein the first surface is a monocrystalline surface, wherein the second surface is a dielectric surface; and wherein the boron doped silicon germanium layer is selectively and epitaxially grown on the first surface.

11. The method according to claim 1 , wherein the monocrystalline surface comprises a monocrystalline silicon germanium surface.

12. The method according to claim 11 wherein the monocrystalline silicon germanium surface comprises a boron doped silicon germanium surface.

Assignments (1)

Continuity (3)

References Cited (400)