Granted Patent B2

US 12,410,522 · App. 18/101,666 · Granted Sep 9, 2025

Inventors: Dieter Pierreux (Dilbeek, BE); Werner Knaepen (Leuven, BE); Bert Jongbloed (Oud-Heverlee, BE); Jeroen Fluit (Amsterdam, NE)

Assignee: ASM IP Holding B.V.

C23C16/48C23C16/4405C23C16/45553C23C16/4583

Abstract

Claims (23)

1. A reaction chamber comprising:

a rack configured to hold a plurality of substrates, wherein the plurality of substrates are aligned vertically in the rack;

an illumination system configured to produce ultraviolet radiation within a range from 100 to 500 nanometers, wherein the illumination system is constructed and arranged to irradiate ultraviolet radiation onto a top surface of each of the plurality of substrates in the rack in the reaction chamber, wherein the illumination system is configured such that the average direction of the ultraviolet radiation is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates; and

a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of the illumination system along a width of the rack.

2. The reaction chamber of claim 1 , wherein the illumination system comprises at least three elongated radiation sources spaced about a periphery of the rack when the rack is positioned within the reaction chamber, each of the elongated radiation sources extending in a direction perpendicular to the top surfaces of the plurality of the substrates and extending over a full length of the rack to illuminate the substrates over the full length of the rack.

3. The reaction chamber of claim 2 , wherein each of the at least three elongated radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 60 to 90 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

4. The reaction chamber of claim 3 , wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

5. The reaction chamber of claim 3 , wherein the average direction of radiation of the radiation beam is at an angle in the range of 85 to 89 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

6. The reaction chamber of claim 2 , wherein each of the elongated radiation sources comprises a tube configured and wherein the illumination system illuminates at least three different sides of the substrate.

7. The reaction chamber of claim 1 , wherein the illumination system is configured to produce ultraviolet radiation within a range from 170 to 300 nanometers.

8. The reaction chamber of claim 2 , wherein the each of the elongated radiation sources comprises a radiation source irradiating ultraviolet radiation onto top surfaces of a plurality of the substrates.

9. The reaction chamber of claim 1 , the illumination system is constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto the top surface from a side of the rack.

10. The reaction chamber of claim 1 , further comprising an optical wave guide.

11. The reaction chamber of claim 1 , wherein the reaction chamber is provided with an inert space creation system to create an inert space in the reaction chamber.

12. The reaction chamber of claim 1 , wherein the reaction chamber is provided with a cleaning inlet to provide a cleaning gas in the reaction chamber to clean outgassing products away in the reaction chamber or prepare a substrate.

13. The reaction chamber of claim 1 , wherein the illumination system comprises a plurality of individually controllable radiation sources arranged in at least one linear set along a line, wherein the line is perpendicular to the top surfaces of the plurality of substrates along a full length of the rack, wherein the power controller is programmed to adjust a radiation output of at least one of the plurality of individually controllable radiation sources along a width of the rack.

14. The reaction chamber of claim 13 , wherein each of the individually controllable radiation sources comprises a light emitting diode.

15. The reaction chamber of claim 13 , wherein each of the plurality of individually controllable radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 60 to 90 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

16. The reaction chamber of claim 15 , wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

17. The reaction chamber of claim 15 , wherein the average direction of radiation of the radiation beam is at an angle in the range of 85 to 89 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.

18. The reaction chamber of claim 13 , wherein the individually controllable radiation sources comprise a first group of the individually controllable radiation sources and a second group of the individually controllable radiation sources, wherein the first group of the individually controllable radiation sources is configured to direct radiation towards a first portion of the top surfaces, and wherein the second group of the individually controllable radiation sources is configured to direct radiation towards a second portion of the top surfaces.

19. The reaction chamber of claim 13 , further comprising a rotation device to rotate the plurality of substrates in the reaction chamber about a vertical axis extending through the centers of the plurality of substrates, whereby each of the plurality of substrates is more uniformly illuminated by the illumination system.

20. The reaction chamber of claim 1 , wherein the illumination system comprises a helical shaped radiation source and wherein the rack is positionable within a center of the helical shaped radiation source, whereby the ultraviolet radiation is directed inward from sides of the rack onto the top surface of each of the plurality of substrates.

Assignments (1)

Continuity (3)

References Cited (400)