Granted Patent B2

US 12,630,919 · App. 17/562,114 · Granted May 19, 2026

Inventors: Charles Dezelah (Helsinki, FI); Craig Wheaton (Kingston, CA); Qi Xie (Wilsele, BE)

Assignee: ASM IP Holding B.V.

C23C16/18C23C16/54

Abstract

Claims (46)

1 . A composition for depositing group 13 metal-containing material on a substrate, the composition comprising a metal alkyl precursor;

wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types,

wherein a first ligand type of the two different alkyl ligand types is a branched C4 to C8 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type of the two different alkyl ligand types is a linear C1 to C4 alkyl,

wherein the group 13 metal atom is bonded to two ligands of the first ligand type, and a ratio of first ligand type to second ligand type in the composition is about two to one, and wherein the second ligand type forms a bridge between two metals atoms comprising the group 13 metal atom, and

wherein the metal alkyl precursor is represented by the following formula, where M represents the group 13 metal atom, L1 represents the first ligand type and L2 represents the second ligand type

2 . The composition of claim 1 , wherein the two ligands of the first ligand type are identical.

3 . The composition of claim 1 , wherein the first ligand type is a C4 to C6 alkyl.

4 . The composition of claim 1 , wherein the first ligand type is tert-butyl.

5 . The composition of claim 1 , wherein the second ligand type is methyl or ethyl.

6 . The composition of claim 1 , wherein the first ligand type is tert-butyl and the second ligand type is methyl.

7 . The composition of claim 1 , wherein the group 13 metal is selected from a group consisting of aluminum, gallium and indium.

8 . The composition of claim 1 , wherein the group 13 metal is aluminum.

9 . The composition of claim 1 , wherein the group 13 metal is gallium.

10 . The composition of claim 1 , wherein the group 13 metal is indium.

11 . The composition of claim 1 , wherein the composition comprises at least 90 w-% of the metal alkyl precursor.

12 . The composition of claim 1 , wherein the vapor pressure of the composition is about 1 Torr at a temperature of 64 to 69° C.

13 . The composition of claim 1 , wherein the composition is stable at a temperature of 60° C. for at least ten weeks.

14 . The composition of claim 1 , wherein the composition solid at standard temperature and pressure.

15 . The composition of claim 14 , wherein the first ligand type is 1,1-dimethylpropyl.

16 . The composition of claim 1 , wherein the second ligand type is methyl.

17 . A method of depositing group 13 metal-containing material on a substrate using a composition comprising a metal alkyl precursor, wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types comprising a first ligand type and a second ligand type;

wherein the first ligand type is a branched C4 to C8 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type is a linear C1 to C4 alkyl,

wherein the group 13 metal atom is bonded to two ligands of the first ligand type, wherein the second ligand type forms a bridge between two metals atoms comprising the group 13 metal atom, and a ratio of first ligand type to second ligand type in the composition is about two to one, and

wherein the metal alkyl precursor is represented by the following formula, where M represents the group 13 metal atom, L1 represents the first ligand type and L2 represents the second ligand type

18 . The method of claim 17 , wherein the group 13 metal-containing material comprises a metal carbide or a metal oxide.

19 . The method of claim 18 , wherein the method is a cyclical vapor deposition process.

20 . The method of claim 17 , wherein the group 13 metal is selected from a group consisting of aluminum, gallium and indium.

21 . A method of depositing carbon-containing material on a substrate using a composition comprising a metal alkyl precursor, wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types comprising a first ligand type and a second ligand type,

wherein the first ligand type is a branched C4 to C7 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type is a linear C1 to C4 alkyl,

wherein the group 13 metal atom is bonded to two ligands of the first ligand type, wherein the second ligand type forms a bridge between two metals atoms comprising the group 13 metal atom, and a ratio of first ligand type to second ligand type in the composition is about two to one, and

wherein the metal alkyl precursor is represented by the following formula, where M represents the group 13 metal atom, L1 represents the first ligand type and L2 represents the second ligand type

22 . An assembly comprising a reactant vessel and a composition contained therein, the composition comprising a metal alkyl precursor, wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types comprising a first ligand type and a second ligand type;

wherein the first ligand type is a branched C4 to C8 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type is a linear C1 to C4 alkyl,

wherein the group 13 metal atom is bonded to two ligands of the first ligand type, wherein the second ligand type forms a bridge between two metals atoms comprising the group 13 metal atom, and a ratio of first ligand type to second ligand type in the composition is about two to one, and

wherein the metal alkyl precursor is represented by the following formula, where M represents the group 13 metal atom, L1 represents the first ligand type and L2 represents the second ligand type

23 . A vapor deposition assembly for depositing a group 13 metal-containing material on a substrate, the assembly comprising:

one or more reaction chambers constructed an arranged to hold the substrate;

a precursor injector system constructed and arranged to provide a metal alkyl precursor into the reaction chamber in a vapor phase;

a reactant vessel constructed and arranged to contain a composition according to claim 1 ; and

the composition of claim 1 within the reactant vessel, wherein

the vapor deposition assembly is constructed and arranged to provide a composition according to claim 1 via the precursor injector system to the reaction chamber to deposit group 13 metal-containing material on the substrate.

24 . A composition for depositing carbon-containing material on a substrate, the composition comprising a metal alkyl precursor,

wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types,

wherein the first ligand type is a branched C4 to C8 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type is a linear C1 to C3 alkyl,

wherein the group 13 metal atom is bonded to two ligands of the first ligand type, a ratio of first ligand type to second ligand type in the composition is about two to one, and the second ligand type forms a bridge between two metals atoms comprising the group 13 metal atom, and

wherein the metal alkyl precursor is represented by the following formula, where M represents the group 13 metal atom, L1 represents the first ligand type and L2 represents the second ligand type

Assignments (1)

Continuity (2)

References Cited (400)