IP Library Granted Patent US 10,784,236
Granted Patent B2
US 10,784,236 · App. 16/028,611 · Granted Sep 22, 2020

Light emitting device reflective bank structure

Inventors: Kapil V. Sakariya (Los Altos, CA); Andreas Bibl (Los Altos, CA); Hsin-Hua Hu (Los Altos, CA)
Assignee: Apple Inc.
H01L25/0753H01L25/167H01L33/06H01L33/36H01L33/44H01L33/60H01L33/62H01L2224/18H01L2224/24137H01L2224/73267H01L2224/82H01L2224/83H01L2224/92244H01L2224/95H01L2924/0002
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Quick Facts
Patent No.
US 10,784,236
App. No.
16/028,611
Granted
Sep 22, 2020
Kind
B2
Abstract

Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Claims (20)

1. A light emitting structure comprising:

a substrate;

an insulating layer on the substrate;

an array of bank openings in the insulating layer, each bank opening including a bottom surface and sidewalls;

a patterned reflective layer covering the bottom surface of each of the bank openings;

a corresponding bonding layer on the patterned reflective layer on the bottom surface of each bank opening; and

a corresponding array of vertical light emitting diode devices mounted within the array of bank openings.

2. The light emitting structure of claim 1 , wherein each vertical light emitting diode device in the array of vertical light emitting diode devices has a maximum width of 1 μm-100 μm.

3. The light emitting structure of claim 2 , wherein each vertical light emitting diode device in the array of vertical light emitting diode devices includes a micro p-n diode that includes a top p-doped or n-doped layer, a lower p-doped or n-doped layer, and one or more quantum well layers between the top and lower p-doped or n-doped layers, and wherein the micro p-n diode includes one or more layers based on II-VI materials or III-V materials.

4. The light emitting structure of claim 3 , wherein no vertical light emitting diode device spans along a sidewall of a corresponding bank opening.

5. The light emitting structure of claim 1 , wherein the patterned reflective layer spans the sidewalls of each of the bank openings.

6. The light emitting structure of claim 5 , wherein the patterned reflective layer completely covers the sidewalls of each of the bank openings.

7. The light emitting structure of claim 6 , wherein the patterned reflective layer completely covers the bottom surface of each of the bank openings.

8. The light emitting structure of claim 1 , wherein each vertical light emitting diode is bonded to the patterned reflective layer with a corresponding bonding layer.

9. The light emitting structure of claim 8 , wherein each bonding layer comprises a material selected from the group consisting of indium, gold, silver, molybdenum, tin, aluminum, and silicon.

10. The light emitting structure of claim 8 , further comprising a sidewall passivation layer formed around the array of vertical light emitting diodes within the array of bank openings.

11. The light emitting structure of claim 10 , further comprising a via layer extending through the insulating layer and in electrical connection with an electrical line in the substrate.

12. The light emitting structure of claim 11 , further comprising a top conductive contact layer in electrical contact with the array of vertical light emitting diodes and the via layer.

13. The light emitting structure of claim 10 , wherein the electrical line is a cathode line.

14. The light emitting structure of claim 10 , wherein the array of bank openings is arranged display with a pixel density greater than 40 pixels per inch.

Continuity (4)
Continuation 15426947 · Feb 7, 2017
Continuation 14864570 · Sep 24, 2015
Continuation 13710443 · Dec 10, 2012
Related Publication 20180374831A1 · Dec 27, 2018