Memory device and manufacturing method thereof
View Patent ↗A memory device and a manufacturing method are provided. The memory device includes a plurality of memory cells stacked on a substrate. The memory cell includes two conductive patterns, a channel pillar, a gate pattern and a charge storage layer. The two conductive patterns are stacked on the substrate. The channel pillar extends between the two conductive patterns along a stacking direction of the two conductive patterns, and is electrically connected with the two conductive patterns. The gate pattern is disposed between the two conductive patterns and located at a sidewall of the channel pillar. The charge storage layer is disposed between the gate pattern and the channel pillar.
1. A memory device, comprising:
a plurality of memory cells stacked on a substrate, wherein the memory cell comprises:
two conductive patterns, stacked over the substrate;
a channel pillar, extending between the two conductive patterns along a stacking direction of the two conductive patterns, and electrically connected with the two conductive patterns;
a gate pattern, disposed between the two conductive patterns and located at a sidewall of the channel pillar; and
a charge storage layer, disposed between the gate pattern and the channel pillar,
wherein the channel pillars of the memory cells are spaced apart from one another along a stacking direction of the memory cells.
2. The memory device of claim 1 , wherein the memory device is a NOR flash memory device.
3. The memory device of claim 1 , wherein vertically adjacent memory cells share one of the conductive patterns therebetween.
4. The memory device of claim 1 , wherein the gate pattern surrounds the channel pillar.
5. The memory device of claim 1 , wherein the memory cell further comprises two dielectric patterns, respectively located between the gate pattern and the two conductive patterns.
6. The memory device of claim 5 wherein the charge storage layer is further located between the gate pattern and the two dielectric patterns, respectively.
7. The memory device of claim 5 , wherein the two dielectric patterns respectively surround the channel pillar.
8. The memory device of claim 1 , wherein the gate pattern extends along a first direction, the two conductive patterns extend along a second direction intersected with the first direction, and the first and second directions are substantially parallel to a surface of the substrate.
9. The memory device of claim 1 , wherein the charge storage layer comprises an oxide/nitride/oxide multilayer structure.
10. The memory device of claim 1 , further comprising isolation structures disposed at opposite sides of the gate pattern.
11. The memory device of claim 1 , wherein vertically adjacent memory cells are connected in parallel.
12. A memory device, comprising:
a plurality of bit lines and a plurality of source lines, alternately stacked on a substrate, wherein the plurality of bit lines and the plurality of source lines are respectively arranged along a first direction, and extending along a second direction intersected with the first direction;
a plurality of word lines, each stacked between vertically adjacent bit line and source line, wherein the plurality of word lines extend along the first direction, and are arranged along the second direction;
a plurality of channel pillars, spaced apart from one another along a stacking direction of the bit lines and the source lines, and each penetrating one of the plurality of word lines and in contact between vertically adjacent bit line and source line; and
a plurality of charge storage layers, each in contact between one of the plurality of channel pillars and one of the plurality of word lines,
wherein an end of each of the plurality of word lines is recessed from an underlying one of the plurality of word lines, and
wherein an end of each bit line or source line of the plurality of bit lines and the plurality of source lines is recessed from an underlying one source line or bit line of the plurality of bit lines and the plurality of source lines.
13. The memory device of claim 12 , further comprising:
a plurality of word line contacts, respectively disposed on the ends of the plurality of word lines; and
a plurality of source/drain contacts, respectively disposed on the ends of the plurality of bit lines and the plurality of source lines.
14. The memory device of claim 12 , wherein at least two of the plurality of word lines are disposed between the same pair of vertically adjacent bit line and source line.
15. The memory device of claim 12 , wherein the memory device is a NOR flash memory device.
16. A memory device, comprising:
a plurality of storage transistors, stacked on a substrate and spaced apart from one another along a stacking direction of the storage transistors; and
a plurality of signal lines, wherein one of the signal lines extends between a bottommost one of the storage transistors and the substrate, and others of the signal lines respectively extend between vertically adjacent ones of the storage transistors.
17. The memory device according to claim 16 , wherein the storage transistors respectively comprise:
a channel pillar, standing on one of the signal lines; and
a gate pattern, laterally surrounding the channel pillar.
18. The memory device according to claim 17 , wherein the gate patterns are spaced apart from the signal lines along the stacking direction.
19. The memory device according to claim 17 , wherein adjacent ones of the channel pillars are spaced apart from each other along the stacking direction by one of the signal lines.
20. The memory device according to claim 17 , wherein adjacent ones of the channel pillars are connected to the same signal line.