2D crystal hetero-structures and manufacturing methods thereof

1. A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures, comprising:

forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate,

wherein the first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides, and

each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.

2. The method of claim 1 , wherein the forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film comprises:

forming the first metal dichalcogenide film on the surface of the first substrate;

patterning the first metal dichalcogenide film on the surface of the first substrate to form one or more trenches in the first metal dichalcogenide film; and

forming the second metal dichalcogenide film over the first metal dichalcogenide film and in the one or more trenches.

3. The method of claim 2 , wherein the one or more trenches are formed using a lithographic operation and an etching operation.

4. The method of claim 3 , wherein the lithographic operation is electron beam lithography and the etching operation is reactive-ion etching.

5. The method of claim 2 , wherein the forming the first metal dichalcogenide film on the first substrate comprises:

forming a first metal film on the first substrate; and

sulfurizing, selenizing, or tellurizing the first metal film to form the first metal dichalcogenide film.

6. The method of claim 2 , wherein the forming the second metal dichalcogenide film further comprises:

forming a first metal film over the first metal dichalcogenide film and in the one or more trenches; and

sulfurizing, selenizing, or tellurizing the first metal film to form the second metal dichalcogenide film.

7. The method of claim 2 , wherein the one or more trenches have a width of about 1 nm to about 10 nm, and a length of about 15 nm to about 30 nm.

8. The method of claim 7 , wherein a first trench is spaced-apart from a second adjacent trench by a distance of about 5 nm to about 30 nm.

9. The method of claim 2 , further comprising:

forming a dielectric layer overlying a first central portion of the second metal dichalcogenide film;

forming a gate electrode over the dielectric layer; and

forming source/drain electrodes over second end portions at opposing ends of the first central portion of the second metal dichalcogenide film.

10. The method of claim 1 , wherein the forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film comprises:

forming a first metal film on the surface of the substrate;

patterning the first metal film to form one or more trenches in the first metal film;

forming a second metal film in the one or more trenches; and

sulfurizing, selenizing, or tellurizing the first metal film and the second metal film to form the first and second metal dichalcogenide films,

wherein the first and the second metal films are different metals.

11. The method of claim 1 , wherein the first metal dichalcogenide film has a thickness of about 0.5 nm to about 10 nm.

12. The method of claim 1 , further comprising forming the second metal dichalcogenide film on a second substrate; and

transferring the second metal dichalcogenide film from the second substrate to the first metal dichalcogenide film.

13. The method of claim 12 , wherein the second substrate is sapphire.

14. The method of claim 1 , wherein the first and second metal dichalcogenides comprise a transition metal dichalcogenide.

15. The method of claim 14 , wherein the transition metal dichalcogenides are selected from the group consisting of WS 2 , MoS 2 , WSe 2 , MoSe 2 , WTe 2 , and MoTe 2 .

16. The method of claim 1 , wherein the second metal dichalcogenide film is a monolayer film.

17. The method of claim 1 , further comprising:

removing a portion of the first metal dichalcogenide film from a peripheral region of the first substrate exposing the first substrate in the peripheral region; and

forming conductive contacts at opposing end regions of the first metal dichalcogenide film.

18. A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures, comprising:

forming a first metal dichalcogenide film on a surface of a substrate;

patterning the first metal dichalcogenide film on the surface of the substrate to form a plurality of trenches in the first metal dichalcogenide film,

wherein the trenches have a width W T , a length L T , and a first trench is spaced-apart from a second adjacent trench by a distance D T , wherein D T ranges from about 0.5W T to about 30W T , and L T ranges from about 3W T to about 30W T ; and

forming a second metal dichalcogenide film over the first metal dichalcogenide film,

wherein the first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides, and

wherein the second metal dichalcogenide film is a monolayer film.

19. A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures, comprising:

forming a first metal dichalcogenide film on a surface of a substrate;

patterning the first metal dichalcogenide film on the surface of the substrate to form a plurality of trenches in the first metal dichalcogenide film;

forming a second metal dichalcogenide film over the first metal dichalcogenide film,

wherein the first metal dichalcogenide film and the second metal dichalcogenide film are different metal dichalcogenides, and

wherein alternating first regions of a monolayer of the second metal dichalcogenide film and second regions of the second metal dichalcogenide film over the first metal dichalcogenide film are formed over the substrate.

20. The method according to claim 19 , further comprising forming a gate electrode over the second metal dichalcogenide film, wherein the gate electrode extends into recesses in the second metal dichalcogenide film, and the recesses are located over the first regions of the monolayer of the second metal dichalcogenide film.