Backside contact structures and fabrication for metal on both sides of devices
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device.
1. An apparatus comprising:
a circuit structure comprising a device stratum comprising a plurality of devices, the device stratum comprising a first side and an opposite second side, wherein at least one of the plurality of devices comprises a transistor device, the transistor device having a gate, a source region, a drain region, and a channel region between the source region and the drain region, and wherein the source region and the drain region are both in the first side of the device stratum;
a first metal interconnect coupled to one of the source region or the drain region of the transistor device by a first contact from the second side of the device stratum; and
a second metal interconnect coupled to the one of the source region or the drain region of the transistor device by a second contact from the first side of the device stratum, wherein the second contact vertically overlaps the first contact.
2. The apparatus of claim 1 , further comprising a third metal interconnect coupled to the other of the source or the drain of the transistor device from the second side of the device stratum.
3. The apparatus of claim 1 , further comprising a third metal interconnect coupled to the gate of the transistor device from the first side of the device stratum.
4. The apparatus of claim 1 , wherein the one of the source and the drain at a point of coupling to the metal interconnect comprises one of a material epitaxially grown on the one of the source and the drain and a material of the one of the source and the drain modified by one of an implanting of a material and a doping with a material.