Seamless ruthenium gap fill

1. A method of substrate processing comprising:

providing a substrate having a surface and at least one feature with a sidewall and a bottom in said surface;

forming a ruthenium film with a thickness on the surface and within the at least one feature; and

repeatedly oxidizing the ruthenium film to form an oxidized ruthenium film and reducing the oxidized ruthenium film to a reduced ruthenium film for a number of cycles, the reduced ruthenium film forming a substantially seamless ruthenium gap fill within the at least one feature at an end of the number of cycles,

wherein reducing the oxidized ruthenium film comprises thermal decomposition of the oxidized ruthenium film and reducing the oxidized ruthenium film does not include exposing the substrate to a reductant.

2. The method of claim 1 , wherein the substrate is maintained at a temperature less than or equal to about 400° C.

3. The method of claim 1 , wherein formation of the ruthenium film is performed by chemical vapor deposition.

4. The method of claim 1 , wherein the ruthenium film formed on the substrate is continuous.

5. The method of claim 1 , wherein the ruthenium film formed on the substrate has a thickness of greater than or equal to about 10 Å.

6. The method of claim 1 , wherein the ruthenium film is formed within the at least one feature forms an open seam.

7. The method of claim 1 , wherein oxidizing the ruthenium film comprises exposing the substrate to an oxidant comprising one or more of oxygen, ozone, nitrogen or plasmas thereof.

8. The method of claim 7 , wherein oxidizing the ruthenium film is performed through a process comprising thermal oxidation.

9. The method of claim 7 , wherein oxidizing the ruthenium film is performed through a process comprising plasma oxidation.

10. The method of claim 1 , wherein oxidizing the ruthenium film oxidizes less than 50% of the thickness of the ruthenium film.

11. The method of claim 1 , wherein reducing the ruthenium film comprises exposing the substrate to a reductant comprising one or more of hydrogen, formic acid, hydrazine, hydrazine derivatives, ammonia or plasmas thereof.

12. The method of claim 11 , wherein reducing the oxidized ruthenium film is performed through a process comprising thermal reduction.

13. The method of claim 11 , wherein reducing the oxidized ruthenium film is performed through a process comprising plasma reduction.

14. The method of claim 1 , wherein the number of cycles is greater than or equal to about 40 cycles.

15. The method of claim 14 , wherein the number of cycles is in the range to about 100 cycles to about 300 cycles.

16. The method of claim 1 , further comprising repeating formation of the ruthenium film at the end of one or more cycles and repeatedly oxidizing and reducing the ruthenium film.

17. A method of substrate processing comprising:

providing a substrate having a surface and at least one feature in said surface with a sidewall and a bottom;

forming a continuous ruthenium film with a thickness in the range of about 15 Å to about 20 Å on the surface and within the at least one feature, the ruthenium film within the at least one feature forming an open seam; and

repeatedly exposing the substrate to an oxidant comprising nitrogen plasma to form a ruthenium nitride layer on the ruthenium film and decomposing the ruthenium nitride layer to a reduced ruthenium film without exposing the substrate to a reductant for a number of cycles, the reduced ruthenium film forming a substantially seamless ruthenium gap fill within the at least one feature at an end of greater than or equal to about 200 cycles.