Perpendicular stacked field-effect transistor device

1. A method for manufacturing a semiconductor device, comprising:

forming a first structure comprising a first field-effect transistor (FET) on a first substrate;

forming a second structure comprising a second FET on a second substrate;

inverting the second structure so that the second FET is under the second substrate;

reducing a height of the second substrate;

adding an insulating layer to the first structure by depositing the insulating layer on the first FET;

stacking the inverted second structure comprising the second FET under the second substrate on the first structure comprising the insulating layer on the first FET, and the first FET on the substrate;

wherein the stacking is performed after reducing the height of the second substrate;

bonding the first structure to the second structure, wherein the insulating layer is positioned between the first and second FETs such that the second FET contacts a top surface of the insulating layer and the first FET contacts a bottom surface the insulating layer;

performing one of a post cure process and an anneal process on the bonded first and second structures; and

removing the second substrate from the second structure;

wherein the first FET is oriented at an angle of ±90 degrees with respect to the second FET;

wherein the first FET has a first conductivity type and the second FET has a second conductivity type opposite the first conductivity type; and

wherein the stacked first and second FETs form a complementary FET (CFET) device.

wherein the first FET is oriented at an angle of ±90 degrees with respect to the second FET.

2. The method according to claim 1 , wherein the angle is measured with respect to an axis extending along a direction of the stacking.

3. The method according to claim 1 , wherein the first FET comprises an n-type FET (NFET), and the second FET comprises a p-type FET (PFET).

4. The method according to claim 1 , wherein the first FET comprises a first plurality of fins extending in a first direction, and the second FET comprises a second plurality of fins extending in a second direction perpendicular to the first direction.

5. The method according to claim 4 , wherein:

the first plurality of fins extends between a first pair of source/drain regions; and

the second plurality of fins extends between a second pair of source/drain regions.

6. The method according to claim 5 , wherein the first and second pair of source/drain regions are oriented perpendicularly with respect to each other.

7. The method according to claim 5 , further comprising forming a contact between at least one source/drain region of the first pair of source/drain regions and at least one source/drain region of the second pair of source/drain regions.

8. The method according to claim 1 , wherein the first FET comprises a first gate region extending in a first direction, and the second FET comprises a second gate region extending in a second direction perpendicular to the first direction.

9. The method according to claim 8 , further comprising forming a contact between the first and second gate regions.

10. The method according to claim 1 , wherein the first FET is connected to a ground voltage (GND).

11. The method according to claim 10 , wherein the second FET is connected to a positive supply voltage (Vdd).

12. The method according to claim 1 , further comprising forming a third FET adjacent the first FET at a same level as the first FET, wherein at least one element of the first FET is electrically connected to at least one element of the third FET through a wire on the same level between the at least one element of the first FET and the at least one element of the third FET.

13. The method according to claim 12 , wherein the wire extends laterally between the at least one element of the first FET and the at least one element of the third FET.

14. The method according to claim 5 , wherein the first and second pair of source/drain regions overlap each other in part.

15. A method for manufacturing a semiconductor device, comprising:

forming a first structure comprising a first field-effect transistor (FET) on a first substrate, the first FET comprising a first plurality of channel regions extending in a first direction;

forming a second structure comprising a second FET on a second substrate, the second FET comprising a second plurality of channel regions extending in a second direction perpendicular to the first direction;

inverting the second structure so that the second FET is under the second substrate;

reducing a height of the second substrate;

adding an insulating layer to the first structure by depositing the insulating layer on the first FET;

stacking the inverted second structure comprising the second FET under the second substrate on the first structure comprising the insulating layer on the first FET, and the first FET on the first substrate;

wherein the stacking is performed after reducing the height of the second substrate;

bonding the first structure to the second structure, wherein the insulating layer is positioned between the first and second FETs such that the second FET contacts a top surface of the insulating layer and the first FET contacts a bottom surface the insulating layer;

performing one of a post cure process and an anneal process on the bonded first and second structures; and

removing the second substrate from the second structure;

wherein the first FET comprises a first gate region extending in the second direction across the first plurality of channel regions, and the second FET comprises a second gate region extending in the first direction across the second plurality of channel regions;

wherein the first FET has a first conductivity type and the second FET has a second conductivity type opposite the first conductivity type; and

wherein the stacked first and second FETs form a complementary FET (CFET) device.

16. The method according to claim 15 , wherein:

the first plurality of channel regions extends between a first pair of source/drain regions; and

the second plurality of channel regions extends between a second pair of source/drain regions.

17. The method according to claim 16 , wherein the first and second pair of source/drain regions are oriented perpendicularly with respect to each other.

18. The method according to claim 17 , wherein the first and second pair of source/drain regions overlap each other in part.