IP Library Granted Patent US 10,793,968
Granted Patent B2
US 10,793,968 · App. 15/753,438 · Granted Oct 6, 2020

Method of production of langatate-based single crystal and langatate-based single crystal

Inventors: Ikuo Takahashi (Yamanashi, JP); Takayuki Aoki (Yamanashi, JP); Youichi Nonogaki (Tokyo, JP); Yoshitaka Kinoshita (Tokyo, JP)
Assignees: CITIZEN FINEDEVICE CO., LTD.; CITIZEN WATCH CO., LTD.
C30B15/10C30B15/00C30B29/30
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Quick Facts
Patent No.
US 10,793,968
App. No.
15/753,438
Granted
Oct 6, 2020
Kind
B2
Abstract

A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.

Claims (7)

1. A method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal having an insulation resistance at 500° C. of 3.0×10 9 Ω·cm or more and a compressive fracture strength in the X-axial direction at 200° C. of 1500 MPa or more,

wherein an atmospheric gas growing said langatate-based single crystal is a mixed gas comprised of an inert gas in which an amount of an oxidizing gas is in a range of 6-15 vol %.

2. The method of production of a langatate-based single crystal according to claim 1 , comprising holding said starting material solution in a platinum crucible to grow said langatate-based single crystal.

3. The method of production of a langatate-based single crystal according to claim 1 , wherein said oxidizing gas is O 2 .

4. The method of production of a langatate-based single crystal according to claim 1 , wherein the single crystal growth axis is a Z-axis.

5. A langatate-based single crystal wherein the langatate-based single crystal has a compressive fracture strength in the X-axial direction at 200° C. of 1500 MPa or more and an insulation resistance at 500° C. of 3.0×10 9 Ω·cm or more.

6. The langatate-based single crystal according to claim 5 , wherein said langatate-based single crystal is La 3 Ta 0.5 Ga 5.5−x Al x O 14 (0<x<5.5).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2018
From: TAKAHASHI, IKUO; AOKI, TAKAYUKI; NONOGAKI, YOUICHI; KINOSHITA, YOSHITAKA
To: CITIZEN FINEDEVICE CO., LTD.; CITIZEN WATCH CO., LTD.
Reel/Frame 044965/0190 →
Priority Claims (1)
JP 2015-161709 · Aug 19, 2015 · national
Continuity (1)
Related Publication 20180245237A1 · Aug 30, 2018