IP Library › Granted Patent US 10,797,001
Granted Patent B2
US 10,797,001 · App. 16/601,588 · Granted Oct 6, 2020

Three-dimensional integrated circuit structures

Inventors: Jie Chen (New Taipei, TW); Hsien-Wei Chen (Hsinchu, TW); Ying-Ju Chen (Yunlin County, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/544H01L23/528H01L23/5226H01L25/0657H01L2223/54426H01L2225/06524H01L2225/06544H01L2225/1041
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Quick Facts
Patent No.
US 10,797,001
App. No.
16/601,588
Granted
Oct 6, 2020
Kind
B2
Abstract

Three-dimensional integrated circuit (3DIC) structures are disclosed. A 3DIC structure includes a first die and a second die bonded to the first die. The first die includes a first integrated circuit region and a first seal ring region around the first integrated circuit region, and has a first alignment mark within the first integrated circuit region. The second die includes a second integrated circuit region and a second seal ring region around the second integrated circuit region, and has a second alignment mark within the second seal ring region and corresponding to the first alignment mark.

Claims (29)

1. A three-dimensional integrated circuit structure, comprising:

a first die comprising a first integrated circuit region, a first seal ring region surrounding the first integrated circuit region, and a first alignment mark within the first integrated circuit region; and

a second die bonded to the first die, and comprising a second integrated circuit region and a second seal ring region surrounding the second integrated circuit region,

wherein the first alignment mark is around a corner of the second seal ring region from a top view, and

wherein the first alignment mark comprises a first alignment pattern parallel to a first border of the second seal ring region, and a second alignment pattern parallel to a second border of the second seal ring region.

2. The three-dimensional integrated circuit structure of claim 1 , wherein no alignment mark is present within the corner of the second seal ring region.

3. The three-dimensional integrated circuit structure of claim 1 , wherein the first alignment mark of the first die is partially overlapped with seal ring patterns of the second die from a top view.

4. The three-dimensional integrated circuit structure of claim 1 , wherein the first alignment mark of the first die is not overlapped with seal ring patterns of the second die from a top view.

5. The three-dimensional integrated circuit structure of claim 1 , wherein the second die is bonded to the first die through a hybrid bonding comprising a metal-to-metal bonding and a dielectric-to-dielectric bonding.

6. The three-dimensional integrated circuit structure of claim 1 , wherein the first die further comprises a plurality of first seal ring patterns within the first seal ring region and outside of the second seal ring region from a top view.

7. The three-dimensional integrated circuit structure of claim 6 , wherein the first alignment mark and the first seal ring patterns are at substantially the same level.

8. The three-dimensional integrated circuit structure of claim 1 , wherein each of the first alignment mark is square, rectangular, polygonal, strip-shaped, T-shaped, L-shaped, box-shaped or cross-shaped.

9. The three-dimensional integrated circuit structure of claim 1 , wherein the second die further comprises a plurality of second seal ring patterns within the second seal ring region and within the first integrated circuit region from a top view.

10. The three-dimensional integrated circuit structure of claim 1 , further comprising a plurality of through dielectric vias over the first die and surrounding the second die.

11. The three-dimensional integrated circuit structure of claim 10 , further comprising a redistribution layer structure over the second die and electrically connected to the plurality of through dielectric vias.

12. A three-dimensional integrated circuit structure, comprising:

a first die comprising a first integrated circuit region, a first seal ring region surrounding the first integrated circuit region, a first alignment mark within the first integrated circuit region, and a plurality of first seal ring patterns within the first seal ring region; and

a second die bonded to the first die, and comprising a second integrated circuit region and a second seal ring region surrounding the second integrated circuit region, and a plurality of second seal ring patterns within the second seal ring region,

wherein the first alignment mark is around a corner of the second seal ring region from a top view, and part of the first alignment mark is placed between the first seal ring patterns and the second seal ring patterns.

13. The three-dimensional integrated circuit structure of claim 12 , wherein the first alignment mark comprises two strip-shaped alignment patterns perpendicular to each other.

14. The three-dimensional integrated circuit structure of claim 12 , wherein the first alignment mark comprises four strip-shaped alignment patterns designed as a square box.

15. The three-dimensional integrated circuit structure of claim 12 , wherein the first alignment mark surrounds at least some of the first seal ring patterns.

16. The three-dimensional integrated circuit structure of claim 12 , wherein the first alignment mark comprises at least one strip-shaped alignment pattern parallel to a border of the second die.

17. A three-dimensional integrated circuit structure, comprising:

a first die comprising a first integrated circuit region, a first seal ring region surrounding the first integrated circuit region, and a first alignment mark within the first integrated circuit region; and

a second die bonded to the first die, and comprising a second integrated circuit region and a second seal ring region surrounding the second integrated circuit region,

wherein the first alignment mark is around a corner of the second seal ring region from a top view, and comprising two alignment patterns between metal features of a first interconnect structure of the first die.

18. The three-dimensional integrated circuit structure of claim 17 , wherein from the top view, one of the two alignment pattern is within a second integrated circuit region from the top view, and the other of the two alignment patterns is outside of a second seal ring region.

19. The three-dimensional integrated circuit structure of claim 17 , wherein no alignment mark is present within the corner of the second seal ring region.

Continuity (2)
Division 16016658 · Jun 25, 2018
Related Publication 20200043861A1 · Feb 6, 2020
Cited By (4)
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