Semiconductor structure and manufacturing method thereof
The present disclosure provides a semiconductor structure including a first insulation, a second insulation over the first insulation, a third insulation over the second insulation, a first conductor proximal to a boundary between the first insulation and the second insulation, and an electronic device electrically connected to the first conductor and at least partially surrounded by the second insulation. A coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.
1. A semiconductor structure, comprising:
a first insulation;
a second insulation over the first insulation;
a third insulation over the second insulation;
a first conductor proximal to a boundary between the first insulation and the second insulation; and
an electronic device electrically connected to the first conductor and at least partially surrounded by the second insulation, wherein
a coefficient of thermal expansion (CTE) of the second insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.
2. The semiconductor structure of claim 1 , wherein a Young's modulus of the second insulation is lower than a Young's modulus of the first insulation and lower than a Young's modulus of the third insulation.
3. The semiconductor structure of claim 1 , wherein the first conductor is at least partially surrounded by the first insulation.
4. The semiconductor structure of claim 1 , wherein the electronic device is bonded on the first conductor.
5. The semiconductor structure of claim 1 , wherein a surface of the first conductor has an area dented into the first conductor and lower than another area of the surface, the surface facing the third insulation.
6. The semiconductor structure of claim 5 , wherein the area of the first conductor has a greater roughness than another area of the first conductor.
7. The semiconductor structure of claim 1 , wherein a portion of the second insulation is between the electronic device and the first insulation.
8. The semiconductor structure of claim 1 , wherein a portion of the second insulation protrudes into the first insulation.
9. The semiconductor structure of claim 1 , wherein a surface of the electronic device is proximal to a boundary between the second insulation and the third insulation, the surface facing away from the first insulation.
10. The semiconductor structure of claim 1 , wherein a surface of the electronic device is covered by the second insulation, the surface facing away from the first insulation.
11. The semiconductor structure of claim 1 , wherein the first insulation comprises at least one glass-clothed layer.
12. The semiconductor structure of claim 1 , wherein the second insulation comprises an ajinomoto build-up film (ABF) material.
13. The semiconductor structure of claim 1 , wherein the third insulation comprises at least one glass-clothed layer.
14. The semiconductor structure of claim 1 , further comprising:
a second conductor, a portion of the second conductor being electrically connected to the electronic device and surrounded by the second insulation, another portion of the second conductor being surrounded by the third insulation.
15. The semiconductor structure of claim 14 , further comprising a die over the third insulation and electrically connected to the second conductor.
16. The semiconductor structure of claim 1 , wherein a surface of the first conductor is coplanar with a surface of the first insulation, the surface of the first conductor facing away from the third insulation.
17. A semiconductor structure, comprising:
a first insulation;
a second insulation over the first insulation, the second insulation being in contact with the first insulation;
a die over the second insulation;
a first conductor proximal to a boundary between the first insulation and the second insulation; and
an electronic device bonded with the first conductor and at least partially surrounded by the second insulation and electrically connected to the die, wherein
a coefficient of thermal expansion (CTE) of the second insulation in contact with the first insulation is larger than a CTE of the first insulation and larger than a CTE of the die.
18. The semiconductor structure of claim 17 , wherein the die is bonded with a surface of the electronic device, the surface facing away from the first insulation.
19. The semiconductor structure of claim 17 , wherein a Young's modulus of the second insulation is lower than a Young's modulus of the first insulation and lower than a Young's modulus of the die.
20. A method of manufacturing a semiconductor structure, comprising:
forming a first insulation;
forming a first conductor on the first insulation;
forming a second insulation over the first conductor and the first insulation, the second insulation being in contact with the first insulation;
bonding an electronic device on the first conductor;
embedding the electronic device in the second insulation; and
forming a third insulation over the electronic device and the second insulation; wherein
a coefficient of thermal expansion (CTE) of the second insulation in contact with the first insulation is larger than a CTE of the first insulation and larger than a CTE of the third insulation.