Mechanisms for forming image sensor device
An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.
1. An image sensor device, comprising:
a semiconductor substrate;
a light sensing region in the semiconductor substrate;
a dielectric layer over the semiconductor substrate;
a filter having a main portion and a protruding portion between the main portion and the semiconductor substrate, wherein the dielectric layer continuously surrounds the main portion of the filter, and the protruding portion of the filter extends past a bottommost surface of the dielectric layer; and
a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.
2. The image sensor device as claimed in claim 1 , wherein the shielding layer is in direct contact with the filter.
3. The image sensor device as claimed in claim 1 , wherein a bottom of the shielding layer is substantially level with a bottom of the filter.
4. The image sensor device as claimed in claim 1 , wherein the shielding layer is made of a metal material.
5. The image sensor device as claimed in claim 1 , further comprising a reflective element between the shielding layer and an edge of the light sensing region.
6. The image sensor device as claimed in claim 5 , wherein the shielding layer is thinner than the reflective element.
7. The image sensor device as claimed in claim 5 , further comprising a second dielectric layer surrounding the reflective element, wherein the second dielectric layer is between the semiconductor substrate and the dielectric layer.
8. The image sensor device as claimed in claim 5 , wherein the reflective element and the shielding layer are made of the same material.
9. The image sensor device as claimed in claim 5 , wherein the reflective element and the shielding layer are made of different materials.
10. The image sensor device as claimed in claim 1 , further comprising an anti-reflection layer between the semiconductor substrate and the shielding layer.
11. An image sensor device, comprising:
a semiconductor substrate;
a light sensing region in the semiconductor substrate;
a dielectric layer over the semiconductor substrate;
a filter having a main portion and a protruding portion between the main portion and the semiconductor substrate, wherein the dielectric layer continuously surrounds the main portion of the filter, and the protruding portion of the filter extends past a bottommost surface of the dielectric layer; and
a shielding layer between the dielectric layer and the semiconductor substrate, wherein a bottom surface of the shielding layer is substantially level with a bottom surface of the filter.
12. The image sensor device as claimed in claim 11 , further comprising a reflective element between the shielding layer and the semiconductor substrate.
13. The image sensor device as claimed in claim 12 , further comprising an anti-reflection layer between the semiconductor substrate and the reflective element.
14. The image sensor device as claimed in claim 12 , wherein the reflective element is thicker than the shielding layer.
15. The image sensor device as claimed in claim 11 , wherein the filter gradually becomes wider along a direction from a bottom surface of the filter towards a top surface of the filter.
16. An image sensor device, comprising:
a color filter being provided between a microlens and a semiconductor substrate;
a dielectric layer having a first surface and a second surface, the first surface facing towards the microlens and the second surface facing towards the semiconductor substrate, wherein the color filter has a main portion continuously surrounded by the dielectric layer, and the color filter has a protruding portion extending past a plane that is level with the second surface of the dielectric layer towards the semiconductor substrate; and
a shielding layer disposed adjacent to the dielectric layer and surrounding the protruding portion.
17. The image sensor device as claimed in claim 16 , further comprising a reflective layer disposed in between the shielding layer and the semiconductor substrate.
18. The image sensor device as claimed in claim 17 , wherein the reflective layer has titanium-containing material.
19. The image sensor device as claimed in claim 18 , wherein the shielding layer contains tungsten.
20. The image sensor device as claimed in claim 17 , wherein a width of the shielding layer is greater than a width of the reflective layer.