Magnetic memory device
According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
1. A magnetic memory device, comprising:
a conductive layer including a first portion, a second portion, and a third portion between the first portion and the second portion;
a first magnetic layer separated from the third portion in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
a second magnetic layer between the third portion and the first magnetic layer; and
a first intermediate layer between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic,
a length along a third direction of at least a portion of the second portion being longer than a third portion length along the third direction of the third portion, the third direction being perpendicular to the first direction and the second direction, wherein the first portion, the second portion, and the third portion extend across a full extent of the conductive layer in the third direction.
2. The device according to claim 1 , wherein
the conductive layer has a first surface and a second surface,
the first surface is between the second surface and the second magnetic layer at the second portion,
a length of an outer edge of the second portion in a cross section of the second portion in a first plane perpendicular to the second direction is longer than a sum of a first line segment length, a second line segment length, and 2 times a length along the first direction of the second portion,
the first line segment length is a length of the first surface in the cross section, and
the second line segment length is a length of the second surface in the cross section.
3. The device according to claim 1 , wherein
the third portion has a third portion side surface along the second direction,
the second portion has a second portion side surface along the second direction, and
an angle between a second plane and the second portion side surface is smaller than an angle between the second plane and the third portion side surface, and the second plane is parallel to the second direction and the third direction.
4. The device according to claim 1 , further comprising:
a first insulating portion; and
a second insulating portion, wherein
at least a portion of the first insulating portion is between the second portion and the second insulating portion, and
the first insulating portion has at least one of a first thermal conductivity higher than a second thermal conductivity of the second insulating portion or a first specific heat higher than a second specific heat of the second insulating portion.
5. The device according to claim 1 , further comprising:
a first insulating portion; and
a second insulating portion, wherein
at least a portion of the first insulating portion is between the second portion and the second insulating portion,
the first insulating portion includes at least one selected from the group consisting of a first compound, a second compound, carbon, and silicon carbide,
the first compound includes an oxide of at least one selected from the group consisting of aluminum, beryllium, yttrium, magnesium, and boron,
the second compound includes a nitride of at least one selected from the group consisting of aluminum, beryllium, yttrium, magnesium, and boron, and
the second insulating portion includes at least one selected from the group consisting of silicon oxide and silicon nitride.
6. The device according to claim 1 , further comprising a controller configured to implement:
a first operation of supplying a first current to the conductive layer from the first portion toward the second portion, and
a second operation of supplying a second current to the conductive layer from the second portion toward the first portion.
7. The device according to claim 1 , wherein
the conductive layer includes one of a first element and a second element,
the first element includes at least one selected from the group consisting of tantalum and tungsten, and
the second element includes at least one selected from the group consisting of platinum and gold.
8. The device according to claim 1 , further comprising a compound region, wherein
a direction from the second portion toward the compound region is along the first direction, and
the compound region includes at least one of an oxide, a nitride, and an oxynitride of a metal included in the conductive layer.