IP Library › Granted Patent US 10,798,493
Granted Patent B2
US 10,798,493 · App. 16/223,124 · Granted Oct 6, 2020

Micro-electro-mechanical systems (MEMS) device and method for fabricating the MEMS

Inventors: Tsung-Min Hsieh (New Taipei, TW); Chien-Hsing Lee (Hsinchu County, TW); Cheng-Wei Tsai (Taichung, TW)
Assignee: Solid State System Co., Ltd.
H04R19/04B81B3/001B81B3/007B81C1/00984H04R31/003B81B2201/0257B81B2203/0127H04R2201/003
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Quick Facts
Patent No.
US 10,798,493
App. No.
16/223,124
Granted
Oct 6, 2020
Kind
B2
Abstract

A Micro-Electro-Mechanical Systems (MEMS) device includes a substrate, a dielectric supporting layer, a diaphragm, a backplate. The substrate has a substrate opening corresponding to a diaphragm region. The dielectric supporting layer is disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region. The diaphragm within the dielectric opening is held by the dielectric supporting layer at a periphery. The backplate is disposed on the dielectric supporting layer, having a plurality of venting holes, connecting to the dielectric opening. The backplate includes a conductive layer and a passivation layer covering over the conductive layer at a first side opposite to the diaphragm, wherein a second side of the conductive layer is facing to the diaphragm and not covered by the passivation layer.

Claims (6)

1. A Micro-Electro-Mechanical Systems (MEMS) device, comprising: a substrate, having a substrate opening corresponding to a diaphragm region;

a dielectric supporting layer, disposed on the substrate, having a dielectric opening corresponding to the substrate opening to form the diaphragm region;

a diaphragm, within the dielectric opening, held by the dielectric supporting layer at a periphery; and

a first backplate, disposed on the dielectric supporting layer, having a plurality of first venting holes, connecting to the dielectric opening, wherein the first backplate comprises a first conductive layer and a first passivation layer covered by the first conductive layer at a side opposite to the diaphragm, wherein the first passivation layer has a first central portion and a first peripheral portion, the first central portion is corresponding to the diaphragm region to provide a first anti-sticky structure and the first peripheral portion is on the dielectric supporting layer and covered by a first peripheral portion of the first conductive layer.

2. The MEMS device of claim 1 , further comprising a second backplate, between the substrate and the diaphragm, held by the dielectric supporting layer at a periphery as embedded, having a plurality of second venting holes, connecting between the substrate opening and the dielectric opening.

3. The MEMS device of claim 2 , wherein the second backplate comprises a second conductive layer and a second passivation layer covered by the second conductive layer at a side opposite to the diaphragm, wherein the second passivation layer has a second central portion and a second peripheral portion, the second central portion is corresponding to the diaphragm region to provide a second anti-sticky structure and the second peripheral portion with the second conductive layer is embedded in the dielectric supporting layer.

Continuity (2)
Division 15335420 · Oct 26, 2016
Related Publication 20190124452A1 · Apr 25, 2019