Fingerprint identification device and manufacturing method thereof
A fingerprint identification device includes a substrate, a piezoelectric layer, a conductive layer, and a planar layer. The piezoelectric layer is disposed on the substrate. The conductive layer is disposed on the piezoelectric layer, and the conductive layer has a rugged microstructure on an upper surface of the conductive layer. The planar layer is disposed on the conductive layer, and a bottom of the planar layer fills the rugged microstructure of the conductive layer.
1. A fingerprint identification device, comprising:
a substrate;
a piezoelectric layer disposed on the substrate;
a conductive layer disposed on the piezoelectric layer; and
a planar layer disposed on the conductive layer and directly adhering the conductive layer;
wherein a distance between a sidewall of the piezoelectric layer and a sidewall of the substrate is 50 μm to 500 μm.
2. The fingerprint identification device of claim 1 , wherein the planar layer has an upper surface which is substantially planar.
3. The fingerprint identification device of claim 1 , wherein the planar layer has a thickness of 5 μm to 200 μm.
4. The fingerprint identification device of claim 1 , wherein the sidewall of the piezoelectric layer, a sidewall of the conductive layer, and a sidewall of the planar layer are coplanar with each other.
5. The fingerprint identification device of claim 4 , wherein another sidewall of the piezoelectric layer, another sidewall of the conductive layer, and another sidewall of the planar layer are coplanar with each other.
6. The fingerprint identification device of claim 4 , wherein an acute angle is formed between the sidewall of the piezoelectric layer and an upper surface of the substrate.
7. The fingerprint identification device of claim 6 , wherein the acute angle ranges from 30° to 70°.
8. A manufacturing method of fingerprint identification device, comprising steps of:
providing a substrate;
forming a piezoelectric material on the substrate;
forming a conductive material on the piezoelectric material;
forming a layer of planar material on the conductive material and directly adhering the conductive layer, comprising:
adhering a high acoustic impedance material on the conductive material;
thermal-pressing the high acoustic impedance material; and
baking the high acoustic impedance material, thereby forming the layer of the planar material; and
dicing the layer of the planar material, the conductive material, and the piezoelectric material to form a plurality of stack structures, wherein each of the stack structures comprises a piezoelectric layer, a conductive layer disposed on the piezoelectric layer, and a planar layer disposed on the conductive layer.